G
Gang Qiu
Researcher at Purdue University
Publications - 59
Citations - 4073
Gang Qiu is an academic researcher from Purdue University. The author has contributed to research in topics: Field-effect transistor & Semiconductor. The author has an hindex of 24, co-authored 50 publications receiving 2770 citations. Previous affiliations of Gang Qiu include Peking University.
Papers
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Journal ArticleDOI
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang,Gang Qiu,Ruoxing Wang,Shouyuan Huang,Qingxiao Wang,Yuanyue Liu,Yuanyue Liu,Yuchen Du,William A. Goddard,Moon J. Kim,Xianfan Xu,Peide D. Ye,Wenzhuo Wu +12 more
TL;DR: In this paper, the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process was reported. But this method suffers from a variety of drawbacks, including limitations in crystal size and stability.
Journal ArticleDOI
Steep-slope hysteresis-free negative capacitance MoS 2 transistors
Mengwei Si,Chun-Jung Su,Chunsheng Jiang,Chunsheng Jiang,Nathan J. Conrad,Hong Zhou,Kerry Maize,Gang Qiu,Chien-Ting Wu,Ali Shakouri,Muhammad A. Alam,Peide D. Ye +11 more
TL;DR: In this article, a two-dimensional steep-slope MOSFET with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack is presented.
Journal ArticleDOI
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang,Gang Qiu,Ruoxing Wang,Shouyuan Huang,Qingxiao Wang,Yuanyue Liu,Yuanyue Liu,Yuchen Du,William A. Goddard,Moon J. Kim,Xianfan Xu,Peide D. Ye,Wenzhuo Wu +12 more
TL;DR: In this article, the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process was reported. But the fabrication method suffers from a variety of drawbacks, including limitations in crystal size and stability.
Journal ArticleDOI
A ferroelectric semiconductor field-effect transistor
Mengwei Si,Atanu K. Saha,Shengjie Gao,Gang Qiu,Jing-Kai Qin,Yuqin Duan,Jie Jian,Chang Niu,Haiyan Wang,Wenzhuo Wu,Sumeet Kumar Gupta,Peide D. Ye +11 more
TL;DR: In this paper, a two-dimensional indium selenide (α-In2Se3) channel material was used as the channel material in the device, and a passivation method based on the atomic layer deposition of aluminium oxide (Al2O3) was developed.
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One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport
TL;DR: In this article, the authors presented experimental demonstrations of one-dimensional (1D) van der Waals material tellurium (Te) under strain and magneto-transport.