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Yuanyue Liu

Researcher at University of Texas at Austin

Publications -  112
Citations -  15397

Yuanyue Liu is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Graphene & Catalysis. The author has an hindex of 51, co-authored 105 publications receiving 10910 citations. Previous affiliations of Yuanyue Liu include National Renewable Energy Laboratory & Lawrence Livermore National Laboratory.

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Laser-induced porous graphene films from commercial polymers

TL;DR: A one-step, scalable approach for producing and patterning porous graphene films with 3-dimensional networks from commercial polymer films using a CO2 infrared laser to provide a rapid route to polymer-written electronic and energy storage devices.
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The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

TL;DR: It was found that the presence of surface oxygen could limit the number of nucleation sites and allowed centimeter-scale domains to grow through a diffusion-limited mechanism, and the electrical conductivity of the graphene was comparable to that of exfoliated graphene.
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Solution-processable 2D semiconductors for high-performance large-area electronics

TL;DR: A general approach to preparing highly uniform, solution-processable, phase-pure semiconducting nanosheets is reported, which involves the electrochemical intercalation of quaternary ammonium molecules into 2D crystals, followed by a mild sonication and exfoliation process.
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Defect Engineering Metal‐Free Polymeric Carbon Nitride Electrocatalyst for Effective Nitrogen Fixation under Ambient Conditions

TL;DR: A defect engineering strategy is reported to realize effective NRR performance on metal-free polymeric carbon nitride (PCN) catalyst and highlights the significance of defect engineering for improving electrocatalysts with weak N2 adsorption and activation ability.
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Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.

TL;DR: 2D metals are used, which are bounded with 2D semiconductors through van der Waals interactions, and the Schottky barrier at the metal-semiconductor junction becomes tunable and can vanish with proper 2D metals.