G
Gatien Cosendey
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 27
Citations - 755
Gatien Cosendey is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Lasing threshold & Semiconductor laser theory. The author has an hindex of 14, co-authored 27 publications receiving 714 citations. Previous affiliations of Gatien Cosendey include Harvard University.
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Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
TL;DR: In this paper, a III-nitride based blue vertical cavity surface emitting laser using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates.
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Broadband blue superluminescent light-emitting diodes based on GaN
Eric Feltin,A. Castiglia,Gatien Cosendey,Luca Sulmoni,J.-F. Carlin,Nicolas Grandjean,Marco Rossetti,J. Dorsaz,Valerio Laino,Marcus Duelk,Christian Velez +10 more
TL;DR: In this paper, the III-nitride blue superluminescent light-emitting diodes on GaN substrates were constructed and the epitaxial structure included an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide.
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Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors
TL;DR: In this article, the authors report on the growth conditions of AlInN layers grown on free-standing GaN substrates and show that an average indium content of ∼20% is needed to obtain defect-free Al-InN/GaN multilayers.
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Two-photon polymerization for fabricating structures containing the biopolymer chitosan.
Daniel S. Correa,Prakriti Tayalia,Gatien Cosendey,D. S. dos Santos,Ricardo Aroca,Eric Mazur,Cleber Renato Mendonça +6 more
TL;DR: The fabrication of structures, with nanometric surface features, using two-photon polymerization of an acrylic resin doped with the biocompatible polymer chitosan using a guest-host scheme shows excellent integrity.
Journal ArticleDOI
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Guillaume Perillat-Merceroz,Gatien Cosendey,Jean-François Carlin,Raphaël Butté,Nicolas Grandjean +4 more
TL;DR: In this paper, the structural degradation mechanism of InAlN layers with increasing thickness was studied and it was shown that those hillocks arise due to kinetic roughening, and that V-defects subsequently appear beyond a critical hillock size.