Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices.

/pdf/perovskite-materials-for-light-emitting-diodes-and-lasers-4it32b32ij.pdf

Perovskite Materials for Light-Emitting Diodes and Lasers.

In the past decade, a two-dimensional matter-light system called the microcavity exciton-polariton has emerged as a new promising candidate of Bose-Einstein condensation BEC in solids. Many pieces of important evidence of polariton BEC have been established recently in GaAs and CdTe microcavities at the liquid helium temperature, opening a door to rich many-body physics inaccessible in experiments before. Technological progress also made polariton BEC at room temperatures promising. In parallel with experimental progresses, theoretical frameworks and numerical simulations are developed, and our understanding of the system has greatly advanced. In this article, recent experiments and corresponding theoretical pictures based on the Gross-Pitaevskii equations and the Boltzmann kinetic simulations for a finite-size BEC of polaritons are reviewed.

/pdf/exciton-polariton-bose-einstein-condensation-4d6ar1e4q3.pdf

Exciton-polariton Bose-Einstein condensation

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Polaritons are quasiparticles that form in semiconductors when an elementary excitation such as an exciton or a phonon interacts sufficiently strongly with light. In particular, exciton-polaritons have attracted tremendous attention for their unique properties, spanning from an ability to undergo ultra-efficient four-wave mixing to superfluidity in the condensed state. These quasiparticles possess strong intrinsic nonlinearities, while keeping most characteristics of the underlying photons. Here we review the most important features of exciton-polaritons in microcavities, with a particular emphasis on the emerging technological applications, the use of new materials for room-temperature operation, and the possibility of exploiting polaritons for quantum computation and simulation.

The road towards polaritonic devices

Long-lived polariton condensates can propagate well beyond the area of their initial excitation while still maintaining spatial coherence. This enables direct and controllable manipulation of the condensate wavefunction.

/pdf/spontaneous-formation-and-optical-manipulation-of-extended-3xzzt9b8rb.pdf

Spontaneous formation and optical manipulation of extended polariton condensates

The authors report room temperature polariton lasing at λ∼345nm in a hybrid AlInN∕AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN∕AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of coherent light emission of a macroscopic population of polaritons occupying the lowest energy state of the lower polariton branch. This was made possible by taking advantage of the efficient relaxation of polaritons in a MQW-MC exhibiting a large vacuum Rabi splitting ΩVRS=56meV.

Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed electrical injection. The high lasing threshold current density still prevents devices from continuous wave lasing because of large self-heating. The reasons for such a high threshold are discussed and we show that it mainly comes from large light absorption in the indium tin oxide current spreading layer. Properly tuning both its thickness and its position with respect to the electrical field could remarkably decrease the threshold.

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at VGS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.

205-GHz (Al,In)N/GaN HEMTs

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500°C, InAlN/GaN HEMTs have been operated up to 900°C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.

/pdf/testing-the-temperature-limits-of-gan-based-hemt-devices-1vs7cmnps7.pdf

Testing the Temperature Limits of GaN-Based HEMT Devices

GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-MHz large-signal operation at 1000°C (in vacuum) for 25 h. Despite slow gate contact degradation, major degradation of the heterostructure could not be observed. Extrapolation of the RF characteristics suggests that operation up to gigahertz frequencies at this temperature may be feasible.

Jean-François Carlin

Papers

Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

205-GHz (Al,In)N/GaN HEMTs

Testing the Temperature Limits of GaN-Based HEMT Devices

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment