G
George Kokkoris
Researcher at National Technical University of Athens
Publications - 93
Citations - 1746
George Kokkoris is an academic researcher from National Technical University of Athens. The author has contributed to research in topics: Plasma etching & Etching (microfabrication). The author has an hindex of 22, co-authored 83 publications receiving 1464 citations. Previous affiliations of George Kokkoris include National Centre of Scientific Research "Demokritos" & Foundation for Research & Technology – Hellas.
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Journal ArticleDOI
All-plastic, low-power, disposable, continuous-flow PCR chip with integrated microheaters for rapid DNA amplification
Despina Moschou,Nikolaos Vourdas,George Kokkoris,George Papadakis,John Parthenios,Stavros Chatzandroulis,Angeliki Tserepi +6 more
TL;DR: In this article, a low-cost and low-power, continuous-flow microfluidic device for DNA amplification by polymerase chain reaction (PCR) with integrated heating elements, on a commercially available thin polymeric substrate (Pyralux® Polyimide), is presented.
Journal ArticleDOI
Controlling roughness: from etching to nanotexturing and plasma-directed organization on organic and inorganic materials
Evangelos Gogolides,Vassilios Constantoudis,George Kokkoris,Dimitrios Kontziampasis,Katerina Tsougeni,George Boulousis,Marilena Vlachopoulou,Angeliki Tserepi +7 more
TL;DR: In this paper, the authors describe how plasma-wall interactions in etching plasmas lead to either random roughening/nanotexturing of polymeric and silicon surfaces, or formation of organized nanostructures on such surfaces.
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Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition
TL;DR: In this article, a surface model for the etching of silicon and silicon dioxide in fluorocarbon plasmas is presented, and the model coefficients are obtained from fits to available beam experimental data, while the model results are successfully compared with high density plasma etching data.
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A global model for C 4 F 8 plasmas coupling gas phase and wall surface reaction kinetics
TL;DR: In this article, a zero-dimensional model for C4F8 plasmas is formulated by coupling gas phase and wall surface reaction kinetics, which allows the calculation of the pressure change after the ignition of the discharge and the effective sticking (surface loss) coefficients of the neutral species on the wall surface.
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A global model for SF 6 plasmas coupling reaction kinetics in the gas phase and on the surface of the reactor walls
TL;DR: In this paper, a complete set of gas phase and surface reactions is formulated and the rate coefficients of the electron impact reactions are based on pertinent cross section data from the literature, which are integrated over a Druyvesteyn electron energy distribution function.