G
Ghulam Dastgeer
Researcher at Sejong University
Publications - 62
Citations - 769
Ghulam Dastgeer is an academic researcher from Sejong University. The author has contributed to research in topics: Heterojunction & Chemistry. The author has an hindex of 9, co-authored 28 publications receiving 226 citations. Previous affiliations of Ghulam Dastgeer include University of Agriculture, Faisalabad & Peking University.
Papers
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Journal ArticleDOI
High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse.
Amir Muhammad Afzal,Ghulam Dastgeer,Muhammad Zahir Iqbal,Praveen Gautam,Mian Muhammad Faisal +4 more
TL;DR: A novel van der Waals (vdW) TMDs heterojunction photo-diode composed of black phosphorus (p-BP) and palladium diselenide (n-PdSe2) which establish a high and tunable rectification and photoresponsivity and demonstrates extraordinary values of detectivity and external quantum efficiency.
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Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2 .
Amir Muhammad Afzal,Muhammad Zahir Iqbal,Ghulam Dastgeer,Ghulam Dastgeer,Aqrab ul Ahmad,Byoungchoo Park +5 more
TL;DR: Such TMD‐based vdWH FETs would improve the photo‐gating characteristics and provide a platform for the realization of a highly sensitive photodetector in the broad VNIR region.
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Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode.
Ghulam Dastgeer,Muhammad Farooq Khan,Ghazanfar Nazir,Amir Muhammad Afzal,Sikandar Aftab,Bilal Abbas Naqvi,Janghwan Cha,Kyung-Ah Min,Yasir Jamil,Jongwan Jung,Suklyun Hong,Jonghwa Eom +11 more
TL;DR: In this paper, the rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS2 flakes in BP/WS2 van der Waals heterojunction diodes and also verified by density function theory calculations.
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Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates.
Ghazanfar Nazir,Malik Abdul Rehman,Muhammad Farooq Khan,Ghulam Dastgeer,Sikandar Aftab,Amir Muhammad Afzal,Yongho Seo,Jonghwa Eom +7 more
TL;DR: This study uses few-layer ReS2 (FL-ReS2) as a channel material to investigate the substrate-dependent mobility, current on/off ratio, Schottky barrier height (SBH), and trap density of states of different dielectric substrates and believes that the photonic characteristics of TMDs can be improved by using h-BN as the substrate and capping layer.
Journal ArticleDOI
WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times.
Amir Muhammad Afzal,Amir Muhammad Afzal,Muhammad Zahir Iqbal,Ghulam Dastgeer,Ghazanfar Nazir,Sohail Mumtaz,Muhammad Usman,Jonghwa Eom +7 more
TL;DR: A novel and compact vertically stacked two-dimensional n- WS2/p-GeSe/n-WS2 van der Waals (vdW) heterojunction bipolar transistor (2D-HBT)-based chemical sensor for gas sensors with huge potential in modern technology in the development of low-power amplifiers and gas sensors.