Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

Method for depositing a chlorine-free conformal SiN film

Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.

Deposition of conformal films by atomic layer deposition and atomic layer etch

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same

Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber.

Pulsed remote plasma method and system

Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.

Soft landing nanolaminates for advanced patterning

Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH 3 , H 2 , N 2 , and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

Interfacial capping layers for interconnects

A diffusion barrier film includes a layer of compositionally graded titanium nitride, having a nitrogen-rich portion and a nitrogen-poor portion. The nitrogen-rich portion has a composition of at least about 40% (atomic) N, and resides closer to the dielectric than the nitrogen-poor portion. The nitrogen-poor portion has a composition of less than about 30% (atomic) N (e.g., between about 5-30% N) and resides in contact with the metal, e.g., copper. The diffusion barrier film can also include a layer of titanium residing between the layer of dielectric and the layer of compositionally graded titanium nitride. The layer of titanium is often partially or completely converted to titanium oxide upon contact with a dielectric layer. The barrier film having a compositionally graded titanium nitride layer provides excellent diffusion barrier properties, exhibits good adhesion to copper, and reduces uncontrolled diffusion of titanium into interconnects.

Compositionally graded titanium nitride film for diffusion barrier applications

Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

After being forgotten for a number of years, Ti has recently re-gained attention for use in Cu barrier applications. For advanced logic products utilizing porous ultra low-k (ULK) dielectric, the main motivation of using a Ti-based barrier is that compared with a Ta-based barrier, the Ti-based barrier is more compatible with porous ULK due to its better resistance to the moisture associated with porous ULK films [1]. For memory products, the main driving force for switching from Ta to Ti is lower cost. Ti offers significantly lower cost of consumables (COC) than Ta. Regardless of product types, there is also a general interest in Ti due to its potential for reliability improvement. In this paper we present an approach of Ti-based barrier that not only addresses the known integration issues associated with Ti, but also demonstrates significant reliability improvement over a Ta-based barrier.

Girish Dixit

Papers

Soft landing nanolaminates for advanced patterning

Interfacial capping layers for interconnects

Compositionally graded titanium nitride film for diffusion barrier applications

Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

Ti-based Barrier for Cu Interconnect Applications