G
Guang-Can Guo
Researcher at University of Science and Technology of China
Publications - 545
Citations - 15193
Guang-Can Guo is an academic researcher from University of Science and Technology of China. The author has contributed to research in topics: Quantum entanglement & Qubit. The author has an hindex of 53, co-authored 545 publications receiving 11582 citations. Previous affiliations of Guang-Can Guo include Center for Excellence in Education & Chinese Academy of Sciences.
Papers
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Device-independent characterization of entanglement based on bell nonlocality
TL;DR: This article reviews the recently developed device-independent methods to characterize entanglement, including self-testing and device- independent certification of entanglements, which can be widely applied in kinds of quantum information processing, especially for those with security demands.
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Improving the precision of optical metrology by detecting fewer photons with biased weak measurement
Peng Yin,Wen-Hao Zhang,Liang Xu,Ze-Gang Liu,Wei-Feng Zhuang,Lei Chen,Ming Gong,Yu Ma,Xing-Xiang Peng,Gong-Chu Li,Jin-Shi Xu,Zong-Quan Zhou,Lijian Zhang,Geng Chen,Chuan-Feng Li,Guang-Can Guo +15 more
TL;DR: In this paper, a modified weak measurement protocol, namely, biased weak measurement, was proposed to improve the precision of optical metrology in the presence of saturation effect, which can be applied in various optical measurement schemes to remarkably mitigate the detector saturation effect with low-cost apparatuses.
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Experimental generation of a high-fidelity four-photon linear cluster state
TL;DR: In this article, a spontaneous parametric down-conversion process was proposed to generate an ultra-high-fidelity four-photon linear cluster state via spontaneous downconversion.
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Entanglement Area Law for Shallow and Deep Quantum Neural Network States
TL;DR: In this paper, the Renyi entanglement entropies of deep Boltzmann machine states were investigated and it was shown that locality constraints imposed on the neural networks make the states obey the Entanglement area law.
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Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide.
Qiang Li,Jun-Feng Wang,Fei-Fei Yan,Ze-Di Cheng,Zheng-Hao Liu,Zhou Kun,Liping Guo,Xiong Zhou,Weiping Zhang,Xiu-Xia Wang,Wei Huang,Jin-Shi Xu,Chuan-Feng Li,Guang-Can Guo +13 more
TL;DR: A method is presented to precisely control the depths of the ion implantation induced shallow silicon vacancy defects in silicon carbide by using reactive ion etching with little surface damage and would pave the way for investigating the surface spin properties and the applications in nanoscale sensing and quantum photonics.