Guangle Zhou

TL;DR: In this paper, a gate-recess process was used to achieve a record on-current of 180 μA/μm at V DS = V GS = 0.5 V with an Ion/Ioff ratio of 6 ×103.

TL;DR: In this article, the currentvoltage characteristics of AlGaSb/InAs staggered-gap n-channel tunnel field effect transistors are simulated in a geometry in which the gate electric field is oriented to be in the same direction as the tunnel junction internal field.

TL;DR: In this article, a tunnel field effect transistor (TFET) with a staggered AlGaSb/InAs heterojunction with the tunneling direction oriented in-line with the gate field was shown to achieve a record high on-current of 78 μA/μm in a TFET at room temperature.

TL;DR: In this article, a vertical n-channel tunnel field effect transistors (TFETs) with tunneling normal to the gate based on an n+ In∞=0.53->;1GaAs/p+ InP heterojunction have been demonstrated to exhibit simultaneously a high ION/IOFF ratio of 6 × 105, a minimum subthreshold swing (SS) of 93 mV/dec, and an on-current of 20 μA/μm at VDS = 0.5 V and a gate swing of 1.75 V at

TL;DR: In this paper, an n+ In 0.53Ga0.47As/n+ /n+,=0.53- >;1 GaAs/p+ InP heterojunction with tunneling normal to the gate is demonstrated.