Wan Sik Hwang

TL;DR: This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

TL;DR: It is demonstrated that exceptionally efficient broadband modulation of terahertz waves at room temperature can be realized using graphene with extremely low intrinsic signal attenuation, which is also the first demonstrated graphene-based device enabled solely by intraband transitions.

TL;DR: In this article, the three-dimensional semiconductor memory devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor pattern and the electrode structures.

TL;DR: Detailed studies of MoS2 transistors on industrial plastic sheets reveal robust electronic properties down to a bending radius of 1 mm which is comparable to previous reports for flexible graphene transistors, and provides guidance for achieving flexible MoS 2 transistors that are reliable at sub-mm bending radius.

TL;DR: In this paper, it is demonstrated that nanomembranes of the widebandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform.