G
Guanxiong Liu
Researcher at University of California, Riverside
Publications - 67
Citations - 4642
Guanxiong Liu is an academic researcher from University of California, Riverside. The author has contributed to research in topics: Graphene & Noise (electronics). The author has an hindex of 33, co-authored 64 publications receiving 4105 citations. Previous affiliations of Guanxiong Liu include IBM.
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An Integrated Tantalum Sulfide - Boron Nitride - Graphene Oscillator: A Charge-Density-Wave Device Operating at Room Temperature
Guanxiong Liu,Bishwajit Debnath,T. R. Pope,Tina T. Salguero,Roger K. Lake,Alexander A. Balandin +5 more
TL;DR: In this paper, a 2D charge-density-wave (CDW) phase was used for constructing an oscillator that operates at room temperature in 2D dichalcogenides.
Book ChapterDOI
Low-Frequency Electronic Noise in the Back-Gated and Top-Gated Graphene Devices
Guanxiong Liu,Qinghui Shao,Alexander A. Balandin,W. Stillman,Michal Shur,Sergey L. Rumyantsev,Sergey L. Rumyantsev +6 more
TL;DR: In this paper, a set of backgated and top-gated graphene field effect transistors were fabricated and investigated for low-frequency 1/f γ electronic noise.
Proceedings ArticleDOI
Surface and volume 1/f noise in multi-layer graphene
TL;DR: In this article, low frequency noise in graphene transistors with the number of carbon layers from N=1 (single layer graphene) to N=15 showed that 1/f noise becomes dominated by the volume noise when the thickness exceeds approximately 7 atomic layers.
Journal ArticleDOI
DNA Gating effect from single layer graphene
Jian Lin,Desalegne Teweldebrhan,Khalid Ashraf,Guanxiong Liu,Xiaoye Jing,Zhong Yan,Mihrimah Ozkan,Roger K. Lake,Alexander A. Balandin,Cengiz S. Ozkan +9 more
TL;DR: In this paper, single stranded deoxyribonucleic acids (ssDNA) are found to act as negative potential gating agents that increase the hole density in single layer graphene.
Journal ArticleDOI
Reversible Tuning of the Electronic Properties of Graphene via Controlled Exposure to Electron Beam Irradiation and Annealing
TL;DR: In this article, a method for tuning the electrical properties of single-layer graphene via electron beam irradiation is presented, which can change, by desired amount, the carrier mobility, shift the charge neutrality point, increase the resistance at the minimum conduction point, induce the "transport gap" and achieve current saturation in graphene.