Guanxiong Liu

TL;DR: It is demonstrated that, in contrast to most two-dimensional materials, ultrathin flakes of InSe are stable under ambient conditions, despite their ambient stability, InSe-based nanodevices show an environmental p-type doping, suppressed by capping InSe with hexagonal boron nitride.

TL;DR: The results of the experimental investigation of the low frequency noise in bilayer graphene transistors were presented in this paper, where the back-gated devices were fabricated using the electron beam lithography and evaporation.

TL;DR: In this article, the authors used high-quality graphene multilayers to directly address the fundamental problem of the noise origin, and found that 1/f noise becomes dominated by the volume noise when the thickness exceeds 7 atomic layers (~2.5 nm).

TL;DR: In this article, the authors describe a possibility of tuning electrical properties of graphene via electron-beam (e-beam) irradiation and show that by controlling the irradiation dose one can change the carrier mobility and increase the resistance at the minimum conduction point in the single layer graphene.

TL;DR: The quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride was used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range as mentioned in this paper.