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Guohan Hu

Researcher at Hitachi

Publications -  15
Citations -  876

Guohan Hu is an academic researcher from Hitachi. The author has contributed to research in topics: Magnetization & Magnetic domain. The author has an hindex of 11, co-authored 15 publications receiving 841 citations. Previous affiliations of Guohan Hu include HGST.

Papers
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Journal ArticleDOI

Magnetic multilayers on nanospheres

TL;DR: In this article, a new class of magnetic material with a unique combination of remarkable properties is presented, which reveals a uniform magnetic anisotropy with an unexpected switching behavior induced by their spherical shape.
Journal ArticleDOI

Magnetization reversal in a novel gradient nanomaterial.

TL;DR: The deposition of Co/Pd multilayer films onto self-assembled particle arrays with particle sizes down to 50 nm leads to pronounced curvature-induced physical properties, offering new opportunities in the functionalization of magnetic nanostructures.
Journal ArticleDOI

Magnetic dot arrays with multiple storage layers

TL;DR: In this paper, an approach to increase the data storage density of magnetic recording was investigated wherein dot arrays are combined with multiple magnetic storage layers. But it was found that even for thick spacer layers a weak magnetostatic coupling of the storage layers is present preferring ferromagnetic alignment of the layers.
Patent

Patterned multilevel perpendicular magnetic recording media

TL;DR: A patterned perpendicular magnetic recording medium has magnetic islands that contain stacks of individual magnetic cells to provide multilevel recording as discussed by the authors, where each cell in an island is formed of a material or set of materials to provide the cell with perpendicular magnetic anisotropy and is a single magnetic domain.
Journal ArticleDOI

Magnetic and recording properties of Co/Pd islands on prepatterned substrates

TL;DR: Magnetically isolated single domain islands with perpendicular anisotropy have been prepared by depositing Co/Pd multilayer films on prepatterned sub-50 nm SiO2/Si islands as discussed by the authors.