J. Appl. Cryst.の発刊に際して

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

介绍了Kirk—Othmer Encyclopedia of Chemical Technology（化工技术百科全书）（第五版）电子图书网络版数据库，并对该数据库使用方法和检索途径作出了说明，且结合实例简单地介绍了该数据库的检索方法。

Kirk-Othmer Encyclopedia of Chemical Technology数据库介绍及实例

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 155 mu m The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices Consequently, there has been tremendous upthrust in research activities of GaSb-based systems As a matter of fact, this compound has proved to be an interesting material for both basic and applied research At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication This article presents an up to date comprehensive account of research carried out hitherto It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility An overview of the lattice, electronic, transport, optical and device related properties is presented Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication (C) 1997 American Institute of Physics

The physics and technology of gallium antimonide: An emerging optoelectronic material

Crystal growth and physical characterization of the semiorganic bis(thiourea) cadmium chloride

Crystal growth and defects characterization of zinc tris (thiourea) sulfate: a novel metalorganic nonlinear optical crystal

The critical properties at the ferromagnetic-paramagnetic transition have been analyzed from data of static magnetization measurements on single crystals of ${\mathrm{Pr}}_{1\ensuremath{-}x}{\mathrm{Pb}}_{x}\mathrm{Mn}{\mathrm{O}}_{3}$ for $x=0.23$ and $x=0.30$. In ${\mathrm{Pr}}_{1\ensuremath{-}x}{\mathrm{Pb}}_{x}\mathrm{Mn}{\mathrm{O}}_{3}$, the ferromagnetic ordering and the metal-insulator transition do not coincide in parts of the phase diagram. The crystal with $x=0.23$ is a ferromagnetic insulator with Curie temperature ${T}_{C}=167\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, while the crystal with $x=0.30$ has ${T}_{C}=198\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ and remains metallic up to a metal-insulator transition temperature ${T}_{\mathrm{MI}}=235\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The dc magnetization measurements were carried out in the field range from $0\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}5\phantom{\rule{0.3em}{0ex}}\mathrm{T}$ for an interval in the critical temperature range ${T}_{C}\ifmmode\pm\else\textpm\fi{}10\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ corresponding to a reduced temperature interval $0.003l\ensuremath{\mid}ϵ\ensuremath{\mid}l0.06$. The exponents $\ensuremath{\beta}$ for spontaneous magnetization, $\ensuremath{\gamma}$ for the initial susceptibility above ${T}_{C}$, and $\ensuremath{\delta}$ for the critical magnetization isotherm at ${T}_{C}$ were obtained by static scaling analysis from modified Arrott plots and by the Kouvel-Fisher method for the insulating crystal with composition $x=0.23$. The data are well described by critical exponents similar to those expected for the Heisenberg universality class relevant for conventional isotropic magnets. Systematic deviations from scaling in the data for the metallic crystal with composition $x=0.30$ are demonstrated from effective critical exponents near the assumed ordering transition. The unconventional magnetic ordering in this system suggests the presence of frustrated magnetic couplings that suppress magnetic ordering and lower the transition temperature.

https://arxiv.org/pdf/cond-mat/0610252.pdf

Critical properties in single crystals of Pr1-xPbxMnO3

Potassium titanyl phosphate (KTP) and its isomorphs have received enormous attention in the last 2 decades. In particular, KTP assumes importance due to its large nonlinear optic and electrooptic coefficients together with the broad thermal and angular acceptance for second harmonic generation. This article provides an overview of the material aspects, structural, physical, and chemical properties and device feasibility of the KTP family of crystals. Some of the current areas of research and development along with their significance in understanding the physical properties as well as device applications are addressed. Optical waveguide fabrication processes and characteristics with their relevance to the present-day technology are highlighted. Studies performed so far have enabled us to understand the fundamental aspects of these materials and what needs to be pursued vigorously is the exploitation of their device applications to the maximum extent.

H. L. Bhat

Papers

The physics and technology of gallium antimonide: An emerging optoelectronic material

Crystal growth and physical characterization of the semiorganic bis(thiourea) cadmium chloride

Crystal growth and defects characterization of zinc tris (thiourea) sulfate: a novel metalorganic nonlinear optical crystal

Critical properties in single crystals of Pr1-xPbxMnO3

Potassium titanyl phosphate and its isomorphs: Growth, properties, and applications