H
Hafez Walid M
Researcher at Intel
Publications - 103
Citations - 1431
Hafez Walid M is an academic researcher from Intel. The author has contributed to research in topics: Transistor & Gate dielectric. The author has an hindex of 17, co-authored 103 publications receiving 1367 citations.
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Patent
Semiconductor devices, radio frequency devices and methods for forming semiconductor devices
TL;DR: In this article, a semiconductor device including a group III-N semiconductor layer, an electrically insulating material layer, and a metal contact structure was proposed, and an electrical resistance between the contact structure and the group III -n semiconductor layers was shown to be smaller than 1*10−7Ω for an area of 1 mm2.
Patent
Transistor with an airgap spacer adjacent to a transistor gate
Chen-Guan Lee,Joodong Park,En-Shao Liu,Cassidy-Comfort Everett S,Hafez Walid M,Chia-Hong Jan +5 more
Patent
Ultra-scaled fin pitch having dual gate dielectrics
Hafez Walid M,Olac-Vaw Roman W,Joodong Park,Chen-Guan Lee,Chia-Hong Jan,Cassidy-Comfort Everett S +5 more
TL;DR: In this paper, dual gate dielectrics are used in fin pitch processes with a first and a second gate structure, where the second gate is used to separate the two dielectric layers along the sidewall of the first gate.
Patent
Non-linear fin-based devices and method for manufacturing the same
N. L. Dias,Chia-Hong Jan,Hafez Walid M,Olac-Vaw Roman W,Chang Hsu Yu,Chang Ting,Ramaswamy Rahul,Liu Pei Chi +7 more
TL;DR: In this paper, a non-planar fin having first, second, and third portions each having major and minor axes and each being monolithic with each other is described. But the major axes of the first and second portions are not co-collinear.