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Chen-Guan Lee
Researcher at Intel
Publications - 46
Citations - 527
Chen-Guan Lee is an academic researcher from Intel. The author has contributed to research in topics: Transistor & Thin-film transistor. The author has an hindex of 8, co-authored 46 publications receiving 499 citations. Previous affiliations of Chen-Guan Lee include University of Texas at Austin.
Papers
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Journal ArticleDOI
Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance
Chen-Guan Lee,Ananth Dodabalapur +1 more
TL;DR: In this paper, the authors demonstrate improved performance and uniformity of solution-processed zinc-tin oxide (ZTO) TFTs by optimizing the prebake process for the ZTO precursor film.
Journal ArticleDOI
Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer
TL;DR: In this article, the characteristics of thin-film transistors with pentacene active layers and source/drain contact layers consisting of either Au, Au coated with highly reduced graphene oxide (HRG), or plain HRG, are compared.
Proceedings ArticleDOI
A 14 nm SoC platform technology featuring 2 nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um 2 SRAM cells, optimized for low power, high performance and high density SoC products
C.-H. Jan,F. Al-Amoody,Chang Hsu-Yu,Tsung-Yuan Chang,Y.-W. Chen,N. L. Dias,Hafez Walid M,D. Ingerly,M. Jang,Eric Karl,S. K.-Y. Shi,K. Komeyli,H. Kilambi,A. Kumar,K. Byon,Chen-Guan Lee,J. Lee,T. Leo,Pei-Chi Liu,Nidhi Nidhi,Olac-Vaw Roman W,C. Petersburg,K. Phoa,Chetan Prasad,C. Quincy,Ramaswamy Rahul,T. Rana,L. Rockford,Anand Subramaniam,Curtis Tsai,P. Vandervoorn,L. Yang,A. Zainuddin,P. Bai +33 more
TL;DR: A leading edge 14 nm SoC platform technology based upon the 2nd generation Tri-Gate transistor technology has been optimized for density, low power and wide dynamic range and a full suite of analog, mixed-signal and RF features are supported.
Journal ArticleDOI
Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors
TL;DR: In this article, the authors report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors and show that the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density.
Journal ArticleDOI
Solution-processed high-k dielectric, ZrO 2, and integration in thin-film transistors
Chen-Guan Lee,Ananth Dodabalapur +1 more
TL;DR: In this article, a sol-gel method to deposit a high-k dielectric, zirconium oxide (ZrO2), has been reported, which has advantages of easy processing and low fabrication cost.