Hans von Känel

TL;DR: Fast, low-temperature epitaxial growth of Ge and SiGe crystals onto micrometer-scale tall pillars etched into Si(001) substrates shows strain- and defect-free growth and formed space-filling arrays up to tens of micrometers in height by a mechanism of self-limited lateral growth.

TL;DR: In this paper, the fabrication of modulation-doped compressively strained Ge quantum wells by low-energy plasma enhanced chemical vapor deposition is described, and a virtual substrate consisting of a thick linearly graded SiGe buffer layer and a cap layer of constant composition is first grown at a high rate (>5nm/s) the active layer stack contains strain compensating cladding layers with modulation doping above the channel

TL;DR: In this paper, the surface of dislocated islands was investigated by scanning tunneling microscopy and the main facets composing the island surface were identified and their area was measured as a function of island size.

TL;DR: In this article, single-domain CoSi2(100) layers have been grown on Si(100), by the use of a template technique and in situ scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) have been used for a detailed surface study.

TL;DR: The complete elimination of dislocations is achieved by growing self-aligned and self-limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch-pit counts.