Roberto Bergamaschini

TL;DR: Fast, low-temperature epitaxial growth of Ge and SiGe crystals onto micrometer-scale tall pillars etched into Si(001) substrates shows strain- and defect-free growth and formed space-filling arrays up to tens of micrometers in height by a mechanism of self-limited lateral growth.

TL;DR: In this article, a general formulation of the anisotropic surface energy density, combined with a suitable phase-field model of surface diffusion, is introduced for the investigation of the evolution toward equilibrium of realistically shaped nanostructures, describing an actual kinetic path and including proper faceting.

TL;DR: In this paper, a tessellated Ge film is constructed by self-aligned micron-sized crystals in a maskless process, showing an excellent prediction of the peculiar role played by flux shielding among microcrystals.

TL;DR: In this article, a patterned microarray of germanium crystals on silicon pillars was used to increase the light emission efficiency by over two orders of magnitude, which was shown to be achievable in photoluminescent semiconductors.

TL;DR: In this paper, a phase-field model simulating the shape evolution during growth is devised, in agreement with the experimental findings for any slit orientations, even when the vertical membranes turn into multifaceted fins.