H
Harvey Guthrey
Researcher at National Renewable Energy Laboratory
Publications - 118
Citations - 1742
Harvey Guthrey is an academic researcher from National Renewable Energy Laboratory. The author has contributed to research in topics: Cathodoluminescence & Silicon. The author has an hindex of 17, co-authored 101 publications receiving 1175 citations. Previous affiliations of Harvey Guthrey include Colorado School of Mines.
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Journal ArticleDOI
Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration
J. F. Geisz,Kevin L. Schulte,Myles A. Steiner,Andrew G. Norman,Harvey Guthrey,Matthew Young,Tao Song,Thomas Moriarty +7 more
TL;DR: Geisz et al. as discussed by the authors presented a series-connected, six-junction inverted metamorphic structure with a 1-Sun global efficiency of 39.2% when tuned to the global spectrum.
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Mechanisms of Electron-Beam-Induced Damage in Perovskite Thin Films Revealed by Cathodoluminescence Spectroscopy
Chuanxiao Xiao,Zhen Li,Harvey Guthrey,John Moseley,Ye Yang,Sarah Wozny,Helio Moutinho,Bobby To,Joseph J. Berry,Brian P. Gorman,Yanfa Yan,Kai Zhu,Mowafak Al-Jassim +12 more
TL;DR: In this article, high-energy electron beams can significantly alter perovskite properties through two distinct mechanisms: defect formation caused by irradiation damage and phase transformation induced by electron-beam heating.
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Metal-Insulator-Metal Diodes: Role of the Insulator Layer on the Rectification Performance
Prakash Periasamy,Harvey Guthrey,A. I. Abdulagatov,Paul F. Ndione,Joseph J. Berry,David S. Ginley,Steven M. George,Philip A. Parilla,Ryan O'Hayre +8 more
TL;DR: Metal–Insulator–Metal (MIM) diodes are actively investigated as high-frequency rectifi cation mechanism in suitably designed MIM structures and materials-design rules to help choose suitable materials for the MIM stack that favor the desired rectify behavior are lacking.
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Recombination by grain-boundary type in CdTe
John Moseley,John Moseley,Wyatt K. Metzger,Helio R. Moutinho,Naba R. Paudel,Harvey Guthrey,Yanfa Yan,Richard K. Ahrenkiel,Richard K. Ahrenkiel,Mowafak Al-Jassim +9 more
TL;DR: In this article, the same microscopic areas of CdTe thin films were used to correlate grain-boundary (GB) recombination by GB “type, including misorientation-based GB types, including coincident site lattice (CSL), other-CSL (Σ = 5-49), and general GBs, which make up ∼47%-48, ∼6%-8, and ∼44%-47, respectively, of the GB length at the film back surfaces.
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Physics of grain boundaries in polycrystalline photovoltaic semiconductors
Yanfa Yan,Wan-Jian Yin,Yelong Wu,Tingting Shi,Naba R. Paudel,Chen Li,Jonathan D. Poplawsky,Zhiwei Wang,Zhiwei Wang,John Moseley,Harvey Guthrey,Helio Moutinho,Stephen J. Pennycook,Mowafak Al-Jassim +13 more
TL;DR: In this article, the authors review the atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers and show that intrinsic GBs with dislocation cores exhibit deep gap states in both polycrystalline Cu(In,Ga)Se2 (CIGS) and cdTe photovoltaic semiconductors.