H
Heng Wu
Researcher at IBM
Publications - 102
Citations - 1550
Heng Wu is an academic researcher from IBM. The author has contributed to research in topics: Transistor & Layer (electronics). The author has an hindex of 17, co-authored 102 publications receiving 1218 citations. Previous affiliations of Heng Wu include Purdue University.
Papers
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Journal ArticleDOI
Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Lingming Yang,Kausik Majumdar,Han Liu,Yuchen Du,Heng Wu,Michael Hatzistergos,P. Y. Hung,Robert Tieckelmann,Wilman Tsai,Chris Hobbs,Peide D. Ye +10 more
TL;DR: A chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2, paving the way for high-performance 2D nanoelectronic devices.
Journal ArticleDOI
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Lingming Yang,Kausik Majumdar,Han Liu,Yuchen Du,Heng Wu,Michael Hatzistergos,P. Y. Hung,Robert Tieckelmann,Wilman Tsai,Chris Hobbs,Peide D. Ye +10 more
TL;DR: In this article, a chloride molecular doping technique was proposed to reduce the contact resistance in the few-layer WS2 and MoS2, which greatly reduced the Schottky barrier width.
Journal ArticleDOI
Reduced leakage current, enhanced ferroelectric and dielectric properties in (Ce,Fe)- codoped Na0.5Bi0.5TiO3 film
TL;DR: In this article, the leakage current density of NBTeFe was reduced by approximately two orders of magnitude by reducing the density of oxygen vacancies and forming the defect complexes, compared with NBT film.
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Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
TL;DR: In this paper, the volume-inversion effect appears at a larger dimension for InGaAs nanowire MOSFETs than its Si counterpart, and it is found that reducing the dimension of the nanowires leads to higher on-current, transconductance, and effective mobility due to stronger quantum confinement and the volume inversion effect.
Journal ArticleDOI
Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
TL;DR: In this paper, the volume inversion effect appeared at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart, and it was found that reducing the dimension of the nanowires leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement.