L
Lingming Yang
Researcher at Purdue University
Publications - 40
Citations - 2150
Lingming Yang is an academic researcher from Purdue University. The author has contributed to research in topics: Field-effect transistor & Contact resistance. The author has an hindex of 20, co-authored 40 publications receiving 1724 citations. Previous affiliations of Lingming Yang include Fudan University.
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Journal ArticleDOI
Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Lingming Yang,Kausik Majumdar,Han Liu,Yuchen Du,Heng Wu,Michael Hatzistergos,P. Y. Hung,Robert Tieckelmann,Wilman Tsai,Chris Hobbs,Peide D. Ye +10 more
TL;DR: A chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2, paving the way for high-performance 2D nanoelectronic devices.
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High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
TL;DR: In this article, the authors report on high performance depletion/enhancement-mode GOOI field effect transistors (FETs) with record high drain currents of 600/450 mA/mm, which is nearly one order of magnitude higher than any other reported drain currents.
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Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications
Jing-Kai Qin,Gang Qiu,Jie Jian,Hong Zhou,Lingming Yang,Adam Charnas,Dmitry Zemlyanov,Cheng-Yan Xu,Xianfan Xu,Wenzhuo Wu,Haiyan Wang,Peide D. Ye +11 more
TL;DR: The results suggest that crystal selenium as a 2D form of a 1D van der Waals solid opens up the possibility to explore device applications, and is suggested to be a promising material candidate for future optoelectronic applications.
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${\rm MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts
TL;DR: For the first time, n-type few-layer MoS2 field effect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107 as discussed by the authors.
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Surface chemistry of black phosphorus under a controlled oxidative environment
TL;DR: The investigation of BP oxidation and the reaction mechanism based on the x-ray photoelectron spectroscopy data are reported and the electrical performance of BP FETs with atomic layer deposition (ALD) dielectric passivation or h-BN passivation formed in a glove-box environment are presented.