P. Y. Hung

TL;DR: A chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2, paving the way for high-performance 2D nanoelectronic devices.

TL;DR: In this article, two atomic layer deposition (ALD) chemistries: tetrakis(ethylmethylamino)hafnium (TEMAHf)+O3 and HfCl4+H2O+O3 were studied as a function of ALD cycle number on Si(100) surfaces.

TL;DR: In this article, a chloride molecular doping technique was proposed to reduce the contact resistance in the few-layer WS2 and MoS2, which greatly reduced the Schottky barrier width.

TL;DR: In this article, the growth mechanism of ALD-TiN film on different dielectrics and the resulting effective work function value was investigated and the growth rate and nucleation rate were found to be dependent on the dielectric films.

TL;DR: Gate first 0.59 nm EOT HfO_x/metal gate stacks for 16 nm node application are demonstrated for the first time and the improved scalability of ZIL H fO x vs. exotic higher-k is compared and demonstrated.