We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching process to roughen the surface, an n-side-up GaN-based LED with a hexagonal “conelike” surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED shows a twofold to threefold increase compared to that of an LED before surface roughening.

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). 
II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). 
III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). 
IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).

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Quantum Transport in Semiconductor Nanostructures

Light-emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. For devices operating at shorter wavelengths, alloy compositions with a greater aluminium content are required. The material properties of these materials lie on the border between conventional semiconductors and insulators, which adds a degree of complexity to the development of efficient light-emitting devices. A number of technical developments have enabled the fabrication of LEDs based on group three nitrides (III-nitrides) that emit in the UV part of the spectrum, providing useful tools for a wealth of applications in optoelectronic systems.

Ultraviolet light-emitting diodes based on group three nitrides

By introducing thick bulk GaN as a substrate, we improved the performance of an AlGaN-based ultraviolet (UV) light-emitting diode (LED). The output power exceeds 3 mW at the injection current of 100 mA under a bare-chip geometry. Internal quantum efficiency is estimated as more than 80%, and the peak wavelength is 352 nm. The maximum power exceeds 10 mW at a large current injection of 400 mA, with an operation voltage of less than 6 V. These results indicate that an efficient UV LED is intrinsically possible by the combination of appropriate device design and the nitride substrate. By introducing packaging technology to enhance extraction efficiency, we will have a compact and efficient UV light source in the wide wavelength range of 200–360 nm, similar to conventional longer-wavelength LEDs.

Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

(AlAs)0.5(GaAs)0.5 fractional‐layer superlattices with a new periodicity perpendicular to the growth direction was successfully grown by metalorganic chemical vapor deposition on (001) GaAs substrates slightly misoriented toward [110]. The atomic structures were analyzed by x‐ray superlattice satellite diffraction. Superlattice periods were exactly the same as the mean distance of each atomic step on the (001) vicinal surface. The results indicate that lateral growth from nucleation at the step edge is the dominant process compared with the two‐dimensional nucleation on atomically flat terraces.

(AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

(AlAs)1/2(GaAs)1/2 fractional‐layer superlattices with a new periodicity perpendicular to the growth direction are successfully grown, by metal–organic chemical vapor deposition on (001) GaAs substrates, slightly misoriented towards [110]. The periodic structure in the lateral [110] direction is analyzed by x‐ray superlattice satellite diffraction and high‐resolution transmission electron microscopy(TEM). Superlattice width along [110] direction are exactly the same as the mean distance of each monolayer step on the (001) vicinal surface. The satellite peak intensity increases with increasing AsH3 partial pressure, and is stronger for substrates misoriented towards [110] than those misoriented towards [110]. The result can be explained using the lateral growth model, taking into account the dangling bond at the step edge. The superlattice image is clearly observed by TEM, which shows that the superlattice periods are almost uniform everywhere.

(AlAs)1/2(GaAs)1/2 fractional‐layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition

By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341–343 nm.

Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

Dilute GaAs1−xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 1018 cm−3, and its bowing parameter is −22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.

Hisao Saito

Papers

Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

(AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

(AlAs)1/2(GaAs)1/2 fractional‐layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition

Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)