scispace - formally typeset
H

Hisayoshi Itoh

Researcher at Japan Atomic Energy Agency

Publications -  223
Citations -  5485

Hisayoshi Itoh is an academic researcher from Japan Atomic Energy Agency. The author has contributed to research in topics: Irradiation & Electron beam processing. The author has an hindex of 31, co-authored 223 publications receiving 5246 citations. Previous affiliations of Hisayoshi Itoh include Japan Atomic Energy Research Institute.

Papers
More filters
Journal ArticleDOI

Band gap narrowing of titanium dioxide by sulfur doping

TL;DR: In this paper, the authors used ab initio band calculations to find that mixing of the S 3p states with the valence band can contribute to the band gap narrowing, based on the theoretical analyses.
Journal ArticleDOI

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

TL;DR: In this article, the electronic structures of titanium dioxide (TiO 2 ) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method.
Journal ArticleDOI

Divacancy in 4H-SiC.

TL;DR: Electron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet groundStates of the neutral divacancy.
Journal ArticleDOI

Intrinsic defects in cubic silicon carbide

TL;DR: In this article, the intrinsic point defects in 3C-SiC have been characterized by electron spin resonance (ESR), positron annihilation spectroscopy (PAS), Hall and photoluminescence (PL) techniques and the structure and annealing behavior of intrinsic defects, e.g. monovacancies at silicon and carbon sublattice sites, are described based on the results obtained by ESR and PAS.
Journal ArticleDOI

Fluorine-doping in titanium dioxide by ion implantation technique

TL;DR: In this article, the authors implanted 200 keV F+ in a single crystalline titanium dioxide (TiO2) rutile at a nominal fluence of 1.5 to 1.7 ions cm−2 and then thermally annealed the implanted sample in air.