H
Hitoshi Ohta
Researcher at Kobe University
Publications - 447
Citations - 4670
Hitoshi Ohta is an academic researcher from Kobe University. The author has contributed to research in topics: Antiferromagnetism & Electron paramagnetic resonance. The author has an hindex of 30, co-authored 442 publications receiving 4338 citations. Previous affiliations of Hitoshi Ohta include Sophia University.
Papers
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Experimental observation of the 1/3 magnetization plateau in the diamond-chain compound Cu3(CO3)2(OH)2.
Hikomitsu Kikuchi,Yutaka Fujii,Meiro Chiba,Seitaro Mitsudo,Toshitaka Idehara,Takashi Tonegawa,Kiyomi Okamoto,Tôru Sakai,Tomohiko Kuwai,Hitoshi Ohta +9 more
TL;DR: The magnetic susceptibility, high field magnetization, and specific heat measurements of Cu3(CO3)2(OH)2, which is a model substance for the frustrating diamond spin chain model, have been performed using single crystals.
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Structure and electronic properties of carbon onions
TL;DR: In this paper, high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and electron spin resonance (ESR) spectra for spherical and polyhedral carbon onions prepared from diamond nanoparticles are investigated.
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Submillimeter EPR of Co:Rb2MgF4 and anomalous g-values
TL;DR: In this article, the anomalous g-values of pair and trimer Co2+ spins by EPR of Rb2Co0.3Mg0.7F4 at 220, 370, 762.2 and 693.6 GHz in pulsed high magnetic fields were found.
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Electronic structure, magnetic ordering, and optical properties of GaN and GaAs doped with Mn
TL;DR: In this paper, the properties of superdoped GaN(As):Mn (a concentration of Mn from 1.56% to 12.5%) are studied by using the tight-binding linear-muffin-tin-orbital method.
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Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping: An electron spin resonance study
TL;DR: In this paper, the correlation between electron spin resonance (ESR) and photoluminescence (PL) measurements was examined, and it was shown that the incorporation of nc-Si in SiO2 results in a drastic increase in the ESR signal; the signal is assigned to the Si dangling bonds at the interfaces between ncSi and matrices (Pb centers).