H
Hongen Shen
Researcher at United States Army Research Laboratory
Publications - 217
Citations - 6862
Hongen Shen is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Photoluminescence & Molecular beam epitaxy. The author has an hindex of 32, co-authored 217 publications receiving 6624 citations.
Papers
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ZnO Schottky ultraviolet photodetectors
TL;DR: In this paper, the results of Schottky UV photodetectors fabricated on n-type ZnO epitaxial films were presented, which were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition.
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Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition
C. R. Gorla,Nuri W. Emanetoglu,S. Liang,William E. Mayo,Yicheng Lu,Michael Wraback,Hongen Shen +6 more
TL;DR: In this paper, high quality epitaxial ZnO films were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition, and the structural, piezoelectric, and optical properties of the films were investigated.
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Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films
TL;DR: In this paper, the authors reported on the realization of wide band gap (5-6 eV), single-phase, metastable, and epitaxial MgxZn1−xO thin-film alloys grown on sapphire by pulsed laser deposition.
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Ultraviolet detectors based on epitaxial ZnO films grown by MOVCD
TL;DR: In this article, high-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C.
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Franz–Keldysh oscillations in modulation spectroscopy
Hongen Shen,Mitra Dutta +1 more
TL;DR: In this paper, the authors present a review of the work on measuring electric fields in semiconductors with a particular emphasis on microstructures using the specialized layer sequence, and discuss the general theory of modulation techniques and their relevance.