Y
Yicheng Lu
Researcher at Rutgers University
Publications - 274
Citations - 8739
Yicheng Lu is an academic researcher from Rutgers University. The author has contributed to research in topics: Thin film & Chemical vapor deposition. The author has an hindex of 41, co-authored 259 publications receiving 8297 citations. Previous affiliations of Yicheng Lu include United States Department of the Army & Chinese Academy of Sciences.
Papers
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ZnO Schottky ultraviolet photodetectors
TL;DR: In this paper, the results of Schottky UV photodetectors fabricated on n-type ZnO epitaxial films were presented, which were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition.
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Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition
C. R. Gorla,Nuri W. Emanetoglu,S. Liang,William E. Mayo,Yicheng Lu,Michael Wraback,Hongen Shen +6 more
TL;DR: In this paper, high quality epitaxial ZnO films were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition, and the structural, piezoelectric, and optical properties of the films were investigated.
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ZnO Schottky barriers and Ohmic contacts
Leonard J. Brillson,Yicheng Lu +1 more
TL;DR: A comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century is provided in this paper, where the results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation.
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Fast electron transport in metal organic vapor deposition grown dye-sensitized ZnO nanorod solar cells.
Elena Galoppini,Jonathan Rochford,Hanhong Chen,G. Saraf,Yicheng Lu,Anders Hagfeldt,Gerrit Boschloo +6 more
TL;DR: The morphology of the working ZnO electrode plays a key role for the electron transport properties and was found to be about 2 orders of magnitude faster than that found for colloidal TiO(2) films.
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Ultraviolet detectors based on epitaxial ZnO films grown by MOVCD
TL;DR: In this article, high-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C.