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C. R. Gorla
Researcher at Rutgers University
Publications - 26
Citations - 1895
C. R. Gorla is an academic researcher from Rutgers University. The author has contributed to research in topics: Chemical vapor deposition & Epitaxy. The author has an hindex of 11, co-authored 19 publications receiving 1842 citations.
Papers
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Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition
C. R. Gorla,Nuri W. Emanetoglu,S. Liang,William E. Mayo,Yicheng Lu,Michael Wraback,Hongen Shen +6 more
TL;DR: In this paper, high quality epitaxial ZnO films were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition, and the structural, piezoelectric, and optical properties of the films were investigated.
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Ultraviolet detectors based on epitaxial ZnO films grown by MOVCD
TL;DR: In this article, high-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C.
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Epitaxial ZnO piezoelectric thin films for saw filters
TL;DR: In this paper, the epitaxial relationship between the ZnO films and the R-plane Al2O3 substrate was studied using X-ray diffraction techniques and an atomically sharp interface structure was revealed by high-resolution TEM.
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High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire
TL;DR: In this article, an optically addressed ultraviolet light modulator was demonstrated which exploits the optical anisotropy in a ZnO film epitaxially grown on (0112) sapphire.
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Control of morphology and orientation of ZnO thin films grown on SiO2/Si substrates
TL;DR: In this article, a two-step growth technique was developed to obtain ZnO films with both good crystallinity and smooth surfaces, where a high temperature buffer layer was initially deposited, which provided a highly crystalline template for the subsequent growth of a low temperature (300-330°C) layer.