scispace - formally typeset
H

Hongmei Li

Researcher at Clemson University

Publications -  27
Citations -  295

Hongmei Li is an academic researcher from Clemson University. The author has contributed to research in topics: Graphene & Field-effect transistor. The author has an hindex of 8, co-authored 23 publications receiving 228 citations. Previous affiliations of Hongmei Li include LG Electronics & Texas Instruments.

Papers
More filters
Journal ArticleDOI

Analysis of a-Si:H/TCO contact resistance for the Si heterojunction back-contact solar cell

TL;DR: In this article, the authors evaluated the contact resistance of amorphous Si ( a- Si:H)/transparent conducting oxide (TCO) in terms of the contribution to the series resistance ( R s ) and fill factor ( FF ) in the Si heterojunction back-contact (HBC) solar cell.
Journal ArticleDOI

Graphene field effect transistors for highly sensitive and selective detection of K+ ions

TL;DR: Graphene-based ion sensitive field effect transistors (GISFETs) with high sensitivity and selectivity for K+ ion detection have been demonstrated utilizing valinomycin based ion selective membrane as discussed by the authors.
Journal ArticleDOI

Highly Conductive and Transparent Reduced Graphene Oxide Nanoscale Films via Thermal Conversion of Polymer-Encapsulated Graphene Oxide Sheets.

TL;DR: It is shown that conventional dip-coating technique can offer fabrication of high quality mono- and bilayered films made of GO sheets, based on the recent discovery that encapsulating individual GO sheets in a nanometer thick molecular brush copolymer layer allows for the nearly perfect formation of the GO layers via dip coating from water.
Journal ArticleDOI

Impact of oxygen plasma treatment on carrier transport and molecular adsorption in graphene

TL;DR: The oxygen plasma treated graphene was found to exhibit much stronger sensitivity toward NH3 molecules both in terms of magnitude and response rate, attributable to increased domain edges and oxygen adsorption related enhancement in p-type doping.
Journal ArticleDOI

Investigation of carrier density and mobility variations in graphene caused by surface adsorbates

TL;DR: In this paper, the authors investigated conductivity, carrier concentration and carrier mobility in graphene as a function of time in response to ionized donor and acceptor adsorbates, and found that a reduction in conductivity and hole density was observed upon exposure to a weak electron donor NH3, while the carrier mobility was found to increase monotonically.