H
Hongyu Li
Researcher at Agency for Science, Technology and Research
Publications - 613
Citations - 19246
Hongyu Li is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Wafer & Medicine. The author has an hindex of 59, co-authored 564 publications receiving 15827 citations. Previous affiliations of Hongyu Li include China Medical University (PRC) & Instituto Nacional de Saúde Dr. Ricardo Jorge.
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Patent
Preparation method of nickel-based high-temperature alloy Inconel718 spring wire
TL;DR: In this paper, a preparation method of a nickel-based high-temperature alloy Inconel718 spring wire is presented. But the method is simple in process, easy to realize and high in production efficiency and hardly causes environmental pollution.
Proceedings ArticleDOI
Design, Fabrication and Characterization of Surface Electrode Ion Trap Integrated with TSV
TL;DR: In this paper, the integration of conventional surface electrode ion trap with through silicon via (TSV) interconnects is proposed and preliminarily demonstrated, where TSVs can transmit the electrical signal from interposer to the electrodes on the top.
Journal Article
[Relationship between VEGF-C expression and nasopharyngeal carcinoma proliferation and metastasis].
TL;DR: High expression of VEGF-C is related with proliferation and metastasis of NPC cells, and is not an independent prognostic factor, but a predictive marker of disease-free survival of NPC patients.
Journal ArticleDOI
A 1,2-Dioxetane-Based Chemiluminescent Probe for Highly Selective and Sensitive Detection of Superoxide Anions in Vitro and in Vivo.
TL;DR: In this article , a chemiluminescent probe (CLO) based on 1,2-dioxetane-phenol with a selective and sensitive response to superoxide anion (O2 .- ), a short-lived reactive oxygen species, participates in many physiological processes.
Journal ArticleDOI
On the origins of near-surface stresses in silicon around Cu-filled and CNT-filled through silicon vias
TL;DR: In this article, micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and carbon nanotube (CNT)-filled TSV samples.