H
Hoon-Ki Lee
Researcher at Chonbuk National University
Publications - 10
Citations - 144
Hoon-Ki Lee is an academic researcher from Chonbuk National University. The author has contributed to research in topics: Schottky barrier & Schottky diode. The author has an hindex of 4, co-authored 9 publications receiving 107 citations.
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Journal ArticleDOI
Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers
V. Janardhanam,Hoon-Ki Lee,Kyu-Hwan Shim,Hyobong Hong,Soo-Hyung Lee,Kwang-Soon Ahn,Chel-Jong Choi +6 more
TL;DR: In this article, the authors investigated the temperature dependent current-voltage (I-V) characteristics of Ti Schottky contacts to p-type InP, and showed that the Ti/p type InP Schotty diode yielded an ideality factor of 1.08 showing good rectifying behavior with a barrier height of 0.73 eV at 300 k.
Journal ArticleDOI
Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments
Hoon-Ki Lee,Hyung-Joong Yun,Kyu-Hwan Shim,Hyun-Gwon Park,T. Jang,Sung-Nam Lee,Chel-Jong Choi +6 more
TL;DR: In this paper, post-wet chemical treatments using sulfuric acid and hydrogen peroxide mixture (SPM) or tetramethyl ammonium hydroxide (TMAH) solutions were performed to reduce dry etch-induced surface damage of β-Ga2O3 caused by the inductively coupled plasma-reactive ion etching (ICP-RIE) process using the Cl2/BCl3 gas mixture.
Journal ArticleDOI
Effects of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode
Hoon-Ki Lee,I. Jyothi,Vallivedu Janardhanam,Kyu-Hwan Shim,Hyung-Joong Yun,Sung-Nam Lee,Hyobong Hong,Jae-Chan Jeong,Chel-Jong Choi +8 more
TL;DR: In this article, the effect of Ta-oxide interlayer on Schottky barrier parameters of Ni/n-type Ge SBDs was investigated, and it was shown that the 5.5nm-thick interlayer was more stoichiometric than the 3.3nm-layer, which was effective in reducing the reduction of interface state density and ideality factor.
Journal ArticleDOI
Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3
P.R. Sekhar Reddy,Vallivedu Janardhanam,Hoon-Ki Lee,Kyu-Hwan Shim,Sung-Nam Lee,V. Rajagopal Reddy,Chel-Jong Choi +6 more
TL;DR: In this article, an Au/Ni/β-Ga2O3 Schottky barrier diode was fabricated on an 8.6-μm-thick drift region grown on heavily doped Ga 2O3 substrate and its electrical and low-frequency noise characteristics were investigated.