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Hsu-Ting Chang

Researcher at National Tsing Hua University

Publications -  10
Citations -  227

Hsu-Ting Chang is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Pentacene & Superconductivity. The author has an hindex of 7, co-authored 10 publications receiving 222 citations. Previous affiliations of Hsu-Ting Chang include Academia Sinica.

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Crystal orientation and thickness dependence of the superconducting transition temperature of tetragonal FeSe1-x thin films.

TL;DR: The correlation between structural distortion and superconductivity in FeSe(1-x) thin films with different preferred growth orientations is reported, suggesting that the low temperature structural distortion is closely associated with thesuperconductivity of this material.
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Magnetic response of an ultrathin cobalt film in contact with an organic pentacene layer.

TL;DR: X-ray spectroscopy and microscopy investigation indicated Co/Pc was chemically stable, whereas Pc/Co was reactive and exhibited complex magnetization pattern, which could cause additional complication for spin injection.
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Reliability of interfacial adhesion in a multi-level copper/low-k interconnect structure

TL;DR: The global local finite element method, including the specified boundary condition (SBC) method and the multi-point constrain method, is validated by the four-point bending experiment and is employed as a bridge to estimate the impact from package level to the deep sub-micron BEoL structure of the plastic ball grid array (PBGA) package.
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The origin of interfacial electronic and magnetic degradation for a ferromagnet atop organic conjugated molecules

TL;DR: In this article, the authors employed synchrotron photoelectron spectra (PES), near-edge X-ray absorption fine structure (NEXAFS) and the magneto-optical Kerr effect (MOKE) to examine the interfacial electronic and magnetic properties of Co/Pentacene(Pc)/Co/Cr/Si(1.0) in a vertical pseudo-spin-valve structure.
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Te substitution effect on electronic properties of β-FeSe thin films

TL;DR: In this paper, the resistivity and Hall coefficient of β-FeSe 1− x Te x films were systematically studied and the scattering time of hole carrier dominated the temperature dependence of the transport properties.