Hui Xue

TL;DR: A new method for designing high-performance broadband photodetectors based on a WSe2/SnSe2 heterostructure that enables high photoresponsivity from visible to telecommunication wavelengths and enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications.

TL;DR: In this article, the authors reported the first actively Q-switched laser with a GEOM, which achieved high-repetition-rate, electrically modulated ultrafast pulses with output energies of up to 123 nJ.

TL;DR: The results provide a practical and effective approach for actively mode‐locked lasers with broad operation bandwidth and compact footprint, which contributes a new way for applications of two‐dimensional (2D) layered materials in ultrafast lasers.

TL;DR: The gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2 is demonstrated, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.