Xueyin Bai

TL;DR: A new method for designing high-performance broadband photodetectors based on a WSe2/SnSe2 heterostructure that enables high photoresponsivity from visible to telecommunication wavelengths and enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications.

TL;DR: In this paper, the phonons and mutual interactions between spin and lattice degrees of freedom in few-layer Fe3GeTe2 were investigated, and three prominent Raman modes at room temperature were elucidated.

TL;DR: In this article, the phonons and mutual interactions between spin and lattice degrees of freedom in few-layer Fe3GeTe2 were investigated, and three prominent Raman modes at room temperature were elucidated.

TL;DR: The gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2 is demonstrated, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.

TL;DR: In this article, the authors demonstrate the coexistence of giant linear/nonlinear optical anisotropy and high emission yield in fibrous red phosphorus (FRP), an exotic 1D vdW semiconductor with quasi-flat bands and a sizeable band gap in the visible spectral range.