Journal ArticleDOI
Large internal dipole moment in InGaN/GaN quantum dots
Irina A. Ostapenko,Gerald Hönig,Christian Kindel,Sven Rodt,André Strittmatter,Axel Hoffmann,Dieter Bimberg +6 more
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In this paper, a direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported, which is in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields.Abstract:
Direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported. Characteristic traces of spectral diffusion, observed in cathodoluminescence of InGaN/GaN quantum dots, allow deducing the magnitude of the intrinsic dipole moment. Our experimental results are in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields.read more
Citations
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Journal ArticleDOI
Highly Stable Colloidal “Giant” Quantum Dots Sensitized Solar Cells
Gurpreet Singh Selopal,Gurpreet Singh Selopal,Haiguang Zhao,Xin Tong,Xin Tong,Daniele Benetti,Fabiola Navarro-Pardo,Fabiola Navarro-Pardo,Yufeng Zhou,David Barba,François Vidal,Zhiming Wang,Federico Rosei,Federico Rosei +13 more
TL;DR: In this paper, a CdSexS1−x interfacial alloyed layer is introduced between CdSe core and CdS shell to further enhance the photovoltaic performance.
Journal ArticleDOI
Core/Shell Quantum Dots Solar Cells
Journal ArticleDOI
Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals.
A. Kumar,Ashok M. Biradar +1 more
TL;DR: The doping of ∼5 wt% of CdTe QDs is found to be the most suitable for achieving good memory effect without significantly affecting the material parameters.
Journal ArticleDOI
Ultraclean Single Photon Emission from a GaN Quantum Dot
TL;DR: The realization of high-quality GaN QDs will enable exploration of optoelectronic properties of III-nitrides, opening up the possibility of realizing single-photon quantum information systems operating at room temperature.
Journal ArticleDOI
Strong Exciton-Photon Coupling with Colloidal Nanoplatelets in an Open Microcavity.
Lucas C. Flatten,Sotirios Christodoulou,Robin K. Patel,Alexander Buccheri,David M. Coles,Benjamin P. L. Reid,Robert A. Taylor,Iwan Moreels,Jason M. Smith +8 more
TL;DR: The large oscillator strength and fluorescence quantum yield of semiconductor nanoplatelets provide a perspective toward novel photonic devices by combining polaritonic and spinoptronic effects.
References
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Book
The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
Random Telegraph Signal in the Photoluminescence Intensity of a Single Quantum Dot
Al. L. Efros,Mervine Rosen +1 more
TL;DR: In this article, the authors proposed a model in which the time dependence of the photoluminescence intensity of a single nanosize quantum dot under cw excitation conditions shows a sequence of ''on'' and ''off'' periods similar to a random telegraph signal.
Journal ArticleDOI
Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
Paul W. Fry,I. E. Itskevich,I. E. Itskevich,D. J. Mowbray,M. S. Skolnick,Jonathan J. Finley,J.A. Barker,Eoin P. O'Reilly,Luke R. Wilson,Ivan A. Larkin,P.A. Maksym,Mark Hopkinson,M. Al-Khafaji,John P. R. David,A. G. Cullis,G. Hill,Jenny Clark +16 more
TL;DR: It is demonstrated that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.
Journal ArticleDOI
A gallium nitride single-photon source operating at 200 K.
Satoshi Kako,Charles Santori,Charles Santori,Charles Santori,K. Hoshino,K. Hoshino,S. Gotzinger,S. Gotzinger,Yoshihisa Yamamoto,Yasuhiko Arakawa +9 more
TL;DR: In this article, the authors reported triggered single-photon emission from gallium nitride quantum dots at temperatures up to 200 K, a temperature easily reachable with thermo-electric cooling.