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Itzhak Orion

Researcher at Ben-Gurion University of the Negev

Publications -  87
Citations -  1075

Itzhak Orion is an academic researcher from Ben-Gurion University of the Negev. The author has contributed to research in topics: Monte Carlo method & Neutron detection. The author has an hindex of 14, co-authored 80 publications receiving 985 citations. Previous affiliations of Itzhak Orion include Weizmann Institute of Science & Columbia University Medical Center.

Papers
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Computed tomography of x-ray index of refraction using the diffraction enhanced imaging method.

TL;DR: Diffraction enhanced imaging is a new, synchrotron-based, x-ray radiography method that uses monochromatic, fan-shaped beams, with an analyser crystal positioned between the subject and the detector, and has the potential for use in clinical radiography and in industry.
Journal Article

Response of avian embryonic brain to spatially segmented x-ray microbeams

TL;DR: Brain tolerance was estimated to be about three times higher to microbeam irradiation as compared with broad beam irradiation, as compared to the broad beam modality.
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The performance of a novel ion-counting nanodosimeter

TL;DR: In this article, the ion-counting nanodosimeter provides a precise measurement of the ionization distribution deposited within a small wall-less gas volume, modeling nanometer-scales of condensed matter, e.g. the DNA molecule.
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Monte Carlo simulation of dose distributions from a synchrotron-produced microplanar beam array using the EGS4 code system.

TL;DR: To design therapy parameters for tumour treatments, the newly upgraded LSCAT (Low energy SCATtering) package of the EGS4 Monte Carlo simulation code was adapted to develop an accurate self-written user code for calculating microbeam radiation dose profiles with a precision of 1 microm.
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MOSFET dosimetry of an X-ray microbeam

TL;DR: In this paper, the role of the topology of the MOSFET gate oxide when mapping radiation microbeams was investigated and the results clearly demonstrate the superiority of the "edge-on" MOS-FET when applied to mapping of narrow radiation beams.