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Ivan K. Schuller

Researcher at University of California, San Diego

Publications -  670
Citations -  24033

Ivan K. Schuller is an academic researcher from University of California, San Diego. The author has contributed to research in topics: Superconductivity & Magnetization. The author has an hindex of 72, co-authored 639 publications receiving 22292 citations. Previous affiliations of Ivan K. Schuller include University of California, Los Angeles & University of California, Berkeley.

Papers
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Individual and multiple vortex pinning in systems with periodic pinning arrays

Cynthia Reichhardt, +4 more
- 15 Feb 2001 - 
TL;DR: In this paper, the scaling of the critical current at commensurate and incommensurate fields for varied pinning strength was examined and it was shown that the depinning force at incommense fields decreases faster than at the commensure fields.
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Pinholes May Mimic Tunneling

David A. Rabson, +6 more
- 26 Jul 2000 - 
TL;DR: In this paper, the authors show how pinholes may arise in a simple but realistic model of film deposition and that purely classical conduction through pinhole may mimic one aspect of tunneling, the exponential decay in current with insulating thickness.
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Enhanced spin-flip scattering at the surface of copper in lateral spin valves

Mikhail Erekhinsky, +2 more
- 25 Aug 2009 - 
TL;DR: In this article, the authors performed non-local electrical measurements of a series of Py/Cu lateral spin valve devices with different Cu thicknesses and found that both the spin diffusion length of Cu and the apparent spin polarization of Py increase with Cu thickness.
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Epitaxy and superlattice growth

Ricardo Ramirez, +2 more
- 15 Nov 1984 - 
TL;DR: In this paper, the energy of an fcc plane in contact with a bcc substrate was calculated as a function of relative position, orientation, vertical displacement, and ratio of fcc/bcc lattice parameters.
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Robust Coupling between Structural and Electronic Transitions in a Mott Material

Yoav Kalcheim, +8 more
- 05 Feb 2019 - 
TL;DR: It is shown that the metal-insulator transition is coupled to the structural phase transition in V_{2}O_{3} films, which has important implications for the performance of Mott materials in next-generation neuromorphic computing technology.