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Ivan K. Schuller
Researcher at University of California, San Diego
Publications - 670
Citations - 24033
Ivan K. Schuller is an academic researcher from University of California, San Diego. The author has contributed to research in topics: Superconductivity & Magnetization. The author has an hindex of 72, co-authored 639 publications receiving 22292 citations. Previous affiliations of Ivan K. Schuller include University of California, Los Angeles & University of California, Berkeley.
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Transverse barrier formation by electrical triggering of a metal-to-insulator transition.
Pavel Salev,L. Fratino,Dayne Sasaki,Rani Berkoun,Javier del Valle,Javier del Valle,Yoav Kalcheim,Yoav Kalcheim,Yayoi Takamura,Marcelo J. Rozenberg,Ivan K. Schuller +10 more
TL;DR: In this paper, the authors used magneto-optical Kerr imaging to demonstrate that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current.
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Ferromagnetism in partially oxidized CuCl
Thomas Saerbeck,J. Pereiro,James Wampler,Jacob Stanley,James Wingert,Oleg Shpyrko,Ivan K. Schuller +6 more
TL;DR: In this paper, the authors used magnetic field modulated microwave spectroscopy, as well as SQUID magnetometry, to identify magnetic phase transitions as a function of temperature, and they found that the magnetism emerges when pure CuCl is exposed to humid air, while the observed magnetic moment depends on the exposure level.
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Suppression of magnetic coercivity in thin Ni films near the percolation threshold
TL;DR: In this article, the behavior of magnetic coercivity H c, across the geometric percolation in MBE grown epitaxial Ni films was studied, and it was shown that the morphology of Ni films changes from a collection of finite clusters to a single infinite cluster, while all other structural parameters remain constant.
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Spin-flip scattering time of a spin-glass
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Quantitative structural characterization of InAs∕GaSb superlattices
TL;DR: In this paper, a combination of X-ray diffraction (XRD) and structural refinement was used to determine the average thicknesses and d spacings of individual InAs and GaSb layers.