J
J. C. Grenier
Researcher at STMicroelectronics
Publications - 3
Citations - 58
J. C. Grenier is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Transistor & Metal gate. The author has an hindex of 1, co-authored 2 publications receiving 29 citations.
Papers
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Proceedings ArticleDOI
Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory
Franck Arnaud,Paola Zuliani,J. P. Reynard,A. Gandolfo,F. Disegni,Paolo Mattavelli,Enrico Gomiero,G. Samanni,C. Jahan,R. Berthelon,Olivier Weber,E. Richard,V. Barral,Alexandre Villaret,S. Kohler,J. C. Grenier,R. Ranica,C. Gallon,A. Souhaite,D. Ristoiu,L. Favennec,V. Caubet,S. Delmedico,N. Cherault,Remi Beneyton,S. Chouteau,P.O. Sassoulas,A. Vernhet,Y. Le Friec,Florian Domengie,L. Scotti,D. Pacelli,Jean-Luc Ogier,F. Boucard,S. Lagrasta,Daniel Benoit,L. Clement,Philippe Boivin,Paulo Ferreira,Roberto Annunziata,Paolo Cappelletti +40 more
TL;DR: For the first time, a 28nm FDSOI e-NVM solution for automotive micro-controller applications using a Phase Change Memory (PCM) based on chalcogenide ternary material is proposed and a true 5V transistor with high analog performance has been demonstrated.
Proceedings ArticleDOI
High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications
Franck Arnaud,Paulo Ferreira,Fausto Piazza,A. Gandolfo,Paola Zuliani,Paolo Mattavelli,Enrico Gomiero,G. Samanni,J. Jasse,C. Jahan,J. P. Reynard,R. Berthelon,Olivier Weber,Alexandre Villaret,B. Dumont,J. C. Grenier,R. Ranica,C. Gallon,C. Boccaccio,A. Souhaite,L. Desvoivres,D. Ristoiu,L. Favennec,V. Caubet,S. Delmedico,N. Cherault,Remi Beneyton,S. Chouteau,P.O. Sassoulas,L. Clement,Philippe Boivin,D. Turgis,F. Disegni,Jean-Luc Ogier,Xavier Federspiel,O. Kermarrec,M. Molgg,A. Viscuso,Roberto Annunziata,Alfonso Maurelli,Paolo Cappelletti,E. Ciantar +41 more
TL;DR: In this paper, an enhancement of FDSOI-PCM solution using Bipolar Junction Transistor (BJT) selector co-integrated with triple gate oxide devices scheme (logic/1,8V/5V) for advanced automotive microcontroller designs is presented.
BEOL Process Effects on ePCM Reliability
Andrea Redaelli,Anna Gandolfo,G. Samanni,Enrico Gomiero,Elisa Petroni,L. Scotti,A. Lippiello,R. Mattavelli,J. Jasse,Davide Codegoni,A Serafini,R. Ranica,C. Boccaccio,Jury Sandrini,Remy Berthelon,J. C. Grenier,Olivier Weber,David Turgis,Alexia Valery,S. Del Medico,Véronique Caubet,J. P. Reynard,Didier Dutartre,Laurent Favennec,Antonino Conte,F. Disegni,M. De Tomasi,A. Ventre,M. Baldo,Daniele Ielmini,Alfonso Maurelli,Paulo Ferreira,Franck Arnaud,Fausto Piazza,Paolo Cappelletti,Roberto Annunziata,Roberto Gonella +36 more
TL;DR: In this article , the effect of back-end of line (BEOL) process on cell performance and reliability of Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM) is discussed.