Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

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High-κ gate dielectrics: Current status and materials properties considerations

In the light of the tremendous progress that has been made in raising the transition temperature of the copper oxide superconductors (for a review, see ref. 1), it is natural to wonder how high the transition temperature, Tc, can be pushed in other classes of materials. At present, the highest reported values of Tc for non-copper-oxide bulk superconductivity are 33 K in electron-doped CsxRbyC60 (ref. 2), and 30 K in Ba1-xKxBiO3 (ref. 3). (Hole-doped C60 was recently found4 to be superconducting with a Tc as high as 52 K, although the nature of the experiment meant that the supercurrents were confined to the surface of the C60 crystal, rather than probing the bulk.) Here we report the discovery of bulk superconductivity in magnesium diboride, MgB2. Magnetization and resistivity measurements establish a transition temperature of 39 K, which we believe to be the highest yet determined for a non-copper-oxide bulk superconductor.

Superconductivity at 39 K in magnesium diboride

We review the dynamical mean-field theory of strongly correlated electron systems which is based on a mapping of lattice models onto quantum impurity models subject to a self-consistency condition. This mapping is exact for models of correlated electrons in the limit of large lattice coordination (or infinite spatial dimensions). It extends the standard mean-field construction from classical statistical mechanics to quantum problems. We discuss the physical ideas underlying this theory and its mathematical derivation. Various analytic and numerical techniques that have been developed recently in order to analyze and solve the dynamical mean-field equations are reviewed and compared to each other. The method can be used for the determination of phase diagrams (by comparing the stability of various types of long-range order), and the calculation of thermodynamic properties, one-particle Green's functions, and response functions. We review in detail the recent progress in understanding the Hubbard model and the Mott metal-insulator transition within this approach, including some comparison to experiments on three-dimensional transition-metal oxides. We present an overview of the rapidly developing field of applications of this method to other systems. The present limitations of the approach, and possible extensions of the formalism are finally discussed. Computer programs for the numerical implementation of this method are also provided with this article.

Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions

The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper. The important TCO semiconductors are impurity-doped ZnO, In2O3 and SnO2 as well as multicomponent oxides consisting of combinations of ZnO, In2O3 and SnO2, including some ternary compounds existing in their systems. Development of these and other TCO semiconductors is important because the expanding need for transparent electrodes for optoelectronic device applications is jeopardizing the availability of indium-tin-oxide (ITO), whose main constituent, indium, is a very expensive and scarce material. Al- and Ga-doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity of the order of 10−5 Ω cm and source materials that are inexpensive and non-toxic, are the best candidates. However, further development of the deposition techniques, such as magnetron sputtering or vacuum arc plasma evaporation, as well as of the targets is required to enable the preparation of AZO and GZO films on large area substrates with a high deposition rate.

https://iopscience.iop.org/article/10.1088/0268-1242/20/4/004/pdf

Transparent conducting oxide semiconductors for transparent electrodes

It is well known that the breakthrough of Bednorz and Muller1 in discovering superconductivity in (La, Ba)2CuO4 was inspired in part by their knowledge of the superconducting properties of Ba(Pb, Bi)O3 (ref. 2). With a transition temperature, Tc, of ∼12 K, that compound was not generally considered anomalous despite the fact that its Tcis 3–5 times higher than that of traditional superconductors with comparable density of states3–5. The increases in Tc for copper-oxide-based materials continue to generate worldwide excitement, but from both a chemical and theoretical point of view it would also be exciting if high-Tcsuperconductivity were observed in another class of materials. Here we report the results of experiments leading us to the single-phase perovskite Ba0.6K0.4BiO3, which has a magnetically determined onset temperature of 29.8 K—a Tc considerably higher than that of conventional superconductors and surpassed only by copper-containing compounds. Superconductivity in this compound occurs within the framework of a three dimensionally connected bismuth-oxygen array. These results suggest that further research toward exploring the limiting Tcs for bismuth-oxide-based, high-temperature superconductors might be fruitful.

Superconductivity near 30 K without copper: the Ba 0.6 K 0.4 BiO 3 perovskite

We report the characterization of series of oxygen deficient Ba2YCu3Ox samples for 7 ≥ x ≥ 6 prepared by Zr gettered annealing at 440°C. Measurements include complete crystal structure analysis at 5 K by powder neutron diffraction, electron microscopy study of the oxygen ordering, and magnetic measurements of the superconducting transitions, with particular attention to the transition widths. The results show for the first time that the 90 K and 60 K plateaus in Tc as a function of oxygen stoichiometry are associated with plateaus in the effective valence of the plane coppers. We also correlate the disappearance of superconductivity for x

Structural anomalies, oxygen ordering and superconductivity in oxygen deficient Ba2YCu3Ox

Manganese oxides with a perovskite structure1 exhibit a transition between a paramagnetic insulating phase and a ferromagnetic metal phase. Associated with this transition is an effect known as colossal magnetoresistance2–5 (CMR)—in the vicinity of the transition temperature, the materials exhibit a large change in resistance in response to an applied magnetic field. Such an effect, if optimized, might find potential application in magnetic devices. But the criteria for achieving (and hence optimizing) CMR are not clear, presenting a challenge for materials scientists. The accepted description of CMR in the manganite perovskites invokes the 'double-exchange' mechanism, whereby charge transport is enhanced by the magnetic alignment of neighbouring Mn ions of different valence configuration (Mn3+ and Mn4+), and inhibited by the formation of charge-induced localized lattice distortions6,7. Here we report the existence of a large magnetoresistive effect in a class of materials—Cr-based chalcogenide spinels—that do not possess heterovalency, distortion-inducing ions, manganese, oxygen or a perovskite structure. The realization of CMR in compounds having a spinel structure should open up a vast range of materials for the further exploration and exploitation of this effect.

Colossal magnetoresistance in Cr-based chalcogenide spinels

We present the materials growth and properties of both epitaxial and amorphous films of Gd2O3 (κ=14) and Y2O3 (κ=18) as the alternative gate dielectrics for Si. The rare earth oxide films were prepared by ultrahigh vacuum vapor deposition from an oxide source. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single domain films in the Mn2O3 structure. Compared to SiO2 gate oxide, the crystalline Gd2O3 and Y2O3 oxide films show a reduction of electrical leakage at 1 V by four orders of magnitude over an equivalent oxide thickness range of 10–20 A. The leakage of amorphous Y2O3 films is about six orders of magnitude better than SiO2 due to a smooth morphology and abrupt interface with Si. The absence of SiO2 segregation at the dielectric/Si interface is established from infrared absorption spectroscopy and scanning transmission electron microscopy. The amorphous Gd2O3 and Y2O3 films withstand the high temperature anneals to 850 °C and remain electrically and chemically intact.

Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (e=14) and Y2O3(e=18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10−3 A/cm2 at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, teq of 15 A, and 10−6 A/cm2 at 1 V for smooth amorphous Y2O3 films (e=18) with a teq of only 10 A. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements.

J. J. Krajewski

Papers

Superconductivity near 30 K without copper: the Ba 0.6 K 0.4 BiO 3 perovskite

Structural anomalies, oxygen ordering and superconductivity in oxygen deficient Ba2YCu3Ox

Colossal magnetoresistance in Cr-based chalcogenide spinels

Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

High ε gate dielectrics Gd2O3 and Y2O3 for silicon