We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Heterojunction band offset engineering

Following the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.

A bird's-eye view on the evolution of semiconductor superlattices and quantum wells

The unusual electrical and optical properties of three important types of semiconductor superlattices are reviewed. The artificial structures which were grown by molecular beam epitaxy (MBE) consist of a periodic sequence of ultrathin crystalline layers of alternating composition (Al x Ga1-x As/GaAs or Ga x In1-x As/GaAs y Sb1-y ) or of alternating doping (n-GaAs/p-GaAs). The electronic energy bands in these superlattives are split into quasi-two-dimensional subbands whose spacing and width can be tailored by appropriate choice of the design parameters of the structure. After a brief outline of the electronic properties of compositional superlattices, we discuss the unique properties of GaAs doping superlattices in detail. The space charge induced band edge modulation in doping superlattices leads to an indirect energy gap in real space. As a consequence, the electrons and holes are spatially separated and their recombination lifetimes are strongly enhanced, i.e. non-equilibrium free-carrier dist...

Compositional and doping superlattices in III-V semiconductors

The subband structure of a two-dimensional electron system at a GaAs/Al x Ga 1- x As heterojunction interface is calculated. Many-body exchange and correlation effects are taken into account in the local density-functional approximation. They are shown to be unimportant but not negligibly small. Spectra of light scatterings are also calculated. Results are in reasonable agreement with existing experiments.

Self-Consistent Results for a GaAs/Al x Ga 1-x As Heterojunction. I. Subband Structure and Light-Scattering Spectra

Far-infrared magnetoabsorption experiments done in a HgTe-CdTe superlattice are presented. From the results, which are interpreted in terms of interband transitions from valence to conduction subbands, the superlattice band structure has been deduced. These investigations show, in particular, that this superlattice is a quasi zero-energy-gap semiconductor, and yield the first determination of the offset between the HgTe and CdTe valence bands.

Magneto-optical investigations of a novel superlattice: HgTe-CdTe

Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices,

https://repository.ubn.ru.nl/bitstream/handle/2066/115612/115612.pdf

Three-dimensional character of semimetallic InAs-GaSb superlattices

Far‐infrared cyclotron resonance (CR) experiments in a selectively doped AlxGa1−xAs ‐GaAs heterojunction are presented. Quantum oscillations appear in the CR line amplitude as theoretically predicted for a two‐dimensional electron gas. The CR linewidth is found to depend on the infrared photon energy, and its correlation with the static mobility is interpreted in the framework of the Ando and Uemura’s model for a two‐dimensional electron gas in a high magnetic field.

J. P. Vieren

Papers

Magneto-optical investigations of a novel superlattice: HgTe-CdTe

Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices,

Three-dimensional character of semimetallic InAs-GaSb superlattices

Cyclotron resonance linewidth in selectively doped GaAs‐AlxGa1−xAs heterojunctions

Electron-mass anisotropy in type-III HgZnTe-CdTe superlattices.