J. S. Tu

TL;DR: In the version of this article originally published, A. Mishchenko's e-mail address should have read artem.mishchenko@manchester.ac.uk as mentioned in this paper.

TL;DR: In this article, the resonance magnetic tunneling in heterostructures formed by graphene single sheets separated by a hexagonal boron nitride barrier and two gates has been investigated, and the discovery step structure of the current patterns with plateaus and abrupt jumps between them is caused by pinning of chemical potentials to the Landau levels in two graphene sheets.

TL;DR: In this article , the authors used 80 Se + ions at the energy of 20 eV and with fluences up to 5.0·10 14 cm −2 to evaluate the potential of ultra-low energy implantation into MoS 2 monolayers.

TL;DR: In this paper, the authors report on the search for alternative substrates for making quality graphene heterostructures, using molybdenum or tungsten disulphides and hBN.

Abstract: The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrm{\mu}$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrm{\mu}$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.