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Artem Mishchenko
Researcher at University of Manchester
Publications - 131
Citations - 26917
Artem Mishchenko is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Quantum tunnelling. The author has an hindex of 46, co-authored 123 publications receiving 22049 citations. Previous affiliations of Artem Mishchenko include University of Bern & Karlsruhe Institute of Technology.
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2D materials and van der Waals heterostructures
TL;DR: Two-dimensional heterostructures with extended range of functionalities yields a range of possible applications, and spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system.
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Field-effect tunneling transistor based on vertical graphene heterostructures.
L. Britnell,Roman V. Gorbachev,Rashid Jalil,Branson D. Belle,Fred Schedin,Artem Mishchenko,Thanasis Georgiou,Mikhail I. Katsnelson,Laurence Eaves,Sergey V. Morozov,Nuno M. R. Peres,Nuno M. R. Peres,Jon Leist,Andre K. Geim,K. S. Novoselov,Leonid Ponomarenko +15 more
TL;DR: A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.
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Strong light-matter interactions in heterostructures of atomically thin films.
L. Britnell,Ricardo M. Ribeiro,Ricardo M. Ribeiro,Axel Eckmann,Rashid Jalil,Branson D. Belle,Artem Mishchenko,Yong-Jin Kim,Yong-Jin Kim,Roman V. Gorbachev,Thanasis Georgiou,Sergey V. Morozov,Alexander N. Grigorenko,Andre K. Geim,Cinzia Casiraghi,Cinzia Casiraghi,A. H. Castro Neto,K. S. Novoselov +17 more
TL;DR: Transition metal dichalcogenides sandwiched between two layers of graphene produce an enhanced photoresponse, which allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).
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Probing the Nature of Defects in Graphene by Raman Spectroscopy
Axel Eckmann,Alexandre Felten,Alexandre Felten,Artem Mishchenko,L. Britnell,Ralph Krupke,Kostya S. Novoselov,Cinzia Casiraghi +7 more
TL;DR: A detailed analysis of the Raman spectra of graphene containing different type of defects is presented, finding that the intensity ratio of the D and D' peak is maximum for sp(3)-defects, it decreases for vacancy-like defects, and it reaches a minimum for boundaries in graphite.
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Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics
Thanasis Georgiou,Rashid Jalil,Branson D. Belle,L. Britnell,Roman V. Gorbachev,Sergey V. Morozov,Yong-Jin Kim,Yong-Jin Kim,Ali Gholinia,Sarah J. Haigh,Oleg Makarovsky,Laurence Eaves,Laurence Eaves,Leonid Ponomarenko,Andre K. Geim,Konstantin S. Novoselov,Artem Mishchenko +16 more
TL;DR: A new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene are described.