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Hans Hofsäss

Researcher at University of Göttingen

Publications -  225
Citations -  4912

Hans Hofsäss is an academic researcher from University of Göttingen. The author has contributed to research in topics: Ion & Thin film. The author has an hindex of 34, co-authored 212 publications receiving 4383 citations. Previous affiliations of Hans Hofsäss include Technische Universität München & Bundeswehr University Munich.

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Carbon nitride deposited using energetic species: a review on xps studies

TL;DR: In this paper, a review of x-ray photoelectron spectroscopy studies on carbon nitride (CN) is presented, based on results obtained from CN thin films prepared by mass selected ion-beam deposition.
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Incorporation of Zn2+ ions into BaTiO3:Er3+/Yb3+ nanophosphor: an effective way to enhance upconversion, defect luminescence and temperature sensing

TL;DR: Ferroelectric BaTiO3 became a multifunctional material via doping of lanthanide ions and subsequently upconversion luminescence was enhanced by incorporation of Zn(2+) ions, and it is inferred that two types of Er(3+) sites are present in the barium titanate lattice.
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Ion implantation of graphene-toward IC compatible technologies.

TL;DR: Using high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites as discussed by the authors.
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Cylindrical spike model for the formation of diamondlike thin films by ion deposition

TL;DR: In this article, the ion energy dependence of nT/nS was analyzed for diamond-like film growth and it was shown that nT nS>1 is the optimum condition for diamondlike films.
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Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM

TL;DR: In this paper, the authors discuss the possibilities, the key benefits and the limitations of three popular binary collision Monte Carlo simulation programs (SDTrimSP, TRIDYN and SRIM).