A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of −1.6dB and a 3dB bandwidth of 80nm.

https://biblio.ugent.be/publication/1147439/file/1147459.pdf

High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible Silicon-On-Insulator platform

We present a compact 13 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 08 A/W and dark current of 3 nA The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current

Silicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review highperformance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitrideassisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

/pdf/silicon-photonic-devices-and-integrated-circuits-6wohukuihl.pdf

Silicon photonic devices and integrated circuits

A dual-channel 10 Gb/s per channel single-chip optoelectronic transceiver has been demonstrated in a 0.13-mum CMOS SOI technology. The transceiver integrates conventionally discrete optoelectronic functions such as high-speed 10-Gb/s electro-optic modulation and 10-Gb/s optical reception on an SOI substrate using a standard CMOS process. The high optical index contrast between silicon (n=3.5) and its oxide (n=1.5) allows for very large scale integration of optical devices, while the use of a standard CMOS process allows these devices to be seamlessly fabricated together with electronics on the same substrate. Such a high level of optoelectronic integration is unprecedented, and serves to substantially reduce system footprint and power dissipation, allowing efficient scaling to higher data rates and broader functionality. This paper describes the photonic components, electronic blocks, and architecture of a CMOS photonic transceiver that achieves an aggregate data rate of 20Gb/s in a dual-channel package, with a BER of less than 10-15 and a power consumption of 1.25 W per channel with both channels operating simultaneously

A Fully Integrated 4 $\times$ 10-Gb/s DWDM Optoelectronic Transceiver Implemented in a Standard 0.13 $\mu{\hbox {m}}$ CMOS SOI Technology

We demonstrate a one-dimensional grating coupler in silicon nitride with a 67-nm 1-dB bandwidth, the largest reported for a grating coupler butt-coupled to standard single-mode fiber. The peak coupling efficiency is -4.2dB. It requires no partial etch and requires only 0.6-μm fabrication resolution.

Wide Bandwidth Silicon Nitride Grating Coupler

InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-/spl Omega/ transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA//spl radic/Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-/spl Omega/ transimpedance and 49-GHz bandwidth.

SiGe differential transimpedance amplifier with 50 GHz bandwidth

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

This paper presents a 6-b 12-GSample/s track-and-hold amplifier (THA) fabricated in an InP-InGaAs-InP double heterojunction bipolar transistor (DHBT) technology. The THA is intended for the front end of a high-speed analog-to-digital converter in a digital-based electronic polarization-mode dispersion compensation circuit for a 10-Gb/s optical receiver. With a high-speed switched emitter follower and clocked track-to-hold transition operation, it shows the signal bandwidth over 14 GHz and features a total harmonic distortion (THD) compatible with 6-b operation with input frequency of 6 GHz and a sampling frequency of 12 GHz. The THD increases better than -23 dB with a 12-GHz input signal of 1 V/sub pp/, corresponding to a 4-b resolution, under a differential clock of 12 GHz.

A 6-b 12-GSamples/s track-and-hold amplifier in InP DHBT technology

High-performance and compact 40-Gb/s driver amplifiers were realized in 1.2-/spl mu/m emitter double-heterojunction InGaAs-InP HBT (D-HBT) technology with a maximum cut-off frequency (f/sub T/) of 150 GHz and a maximum oscillation frequency (f/sub max/) of 200 GHz. Two-stage differential drivers feature a lumped input and fully distributed output stage and deliver a maximum differential output swing of 11.3 V peak-to-peak (V/sub pp/) at 40 Gb/s with less then 350 fs of added rms jitter and rise and fall times of about 7 ps while consuming a total power of 3 W. When biased at a lower output swing of 6.3 V/sub pp/, excellent 40-Gb/s eyes with a 7-ps fall time, 6-ps rise time, and no observable jitter deterioration compared with the input source are obtained at a reduced power consumption of 1.7 W. On-wafer measured differential S-parameters show a differential gain of 25 dB, 50 GHz bandwidth, and input and output reflection below -20 dB from 2 to 45 GHz. The amplifiers' small die size (1.0/spl times/1.7 mm), relatively low power consumption, large output swing, and ability to have dc coupled inputs and outputs enable compact 40-Gb/s optical transmitters with good eye opening for both conventional transmission formats such as nonreturn-to-zero and return-to-zero and alternative formats such as duobinary and differential phase shift keying.

High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 V/sub pp/) output swing at 40 Gb/s

High-performance and compact distributed amplifiers were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a current gain cutoff frequency (fT) and a maximum oscillation frequency (fmax) of 337 and 345 GHz, respectively. A gain of 17 dB with flatness within 1.5 dB was obtained from 45 MHz up to 110 GHz, the highest available measurement frequency. The measured input and output reflection of the amplifier are better than - 10 dB up to respectively 100 and 110 GHz. The resulting gain bandwidth product (GBW) is more than 750 GHz which is the highest reported so far for any single-stage amplifiers to our knowledge

J.S. Weiner

Papers

SiGe differential transimpedance amplifier with 50 GHz bandwidth

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

A 6-b 12-GSamples/s track-and-hold amplifier in InP DHBT technology

High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 V/sub pp/) output swing at 40 Gb/s

Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth