J
J.T. Kavalieros
Researcher at University of Florida
Publications - 4
Citations - 226
J.T. Kavalieros is an academic researcher from University of Florida. The author has contributed to research in topics: MOSFET & Transistor. The author has an hindex of 3, co-authored 4 publications receiving 223 citations.
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Journal ArticleDOI
Direct-current measurements of oxide and interface traps on oxidized silicon
Arnost Neugroschel,Chih-Tang Sah,K.M. Han,M.S. Carroll,Toshikazu Nishida,J.T. Kavalieros,Yi Lu +6 more
TL;DR: In this paper, a direct-current currentvoltage measurement technique of interface and oxide traps on oxidized silicon is demonstrated using the gate-controlled parasitic bipolar junction transistor of a metaloxide-silicon field effect transistor in a p/n junction isolation well.
Journal ArticleDOI
Profiling interface traps in MOS transistors by the DC current-voltage method
TL;DR: In this article, position profiling the interface trap density along the channel length of metal-oxide-silicon transistors by the Direct-Current Current-Voltage method is illustrated for five density variations: zero, peaked in drain junction space-charge layer, constant in channel, nonconstant in channel and peaked in Drain junction space charge layer.
Journal ArticleDOI
Separation of interface and nonuniform oxide traps by the DC current-voltage method
J.T. Kavalieros,Chih-Tang Sah +1 more
TL;DR: In this article, a new procedure is demonstrated which separates the nonuniform oxide charge distribution from interface traps by combining the analysis of two experimental DC characteristics: the subthreshold drain-current and the DC base recombination current versus the gate voltage.
Proceedings ArticleDOI
Characterization of ULSI gate oxide reliability using substrate and channel electron injection stresses
TL;DR: A hot electron reliability characterization methodology has been developed to separate the geometry and process related degradations using BIMOS (bipolar-MOS) and SMOSC (sourced MOS capacitor) test structures which uniformly inject the hot electrons from the substrate into the oxide.