J. T. Kobayashi

TL;DR: In this paper, a single-crystal hexagonal GaN with its basal plane parallel to the Si(111) plane is shown to be grown epitaxially by atmospheric pressure metalorganic chemical vapor deposition on an aluminum oxide compound layer utilized as an intermediate layer between GaN and a Si( 111).

TL;DR: A detailed time-resolved cathodoluminescence (CL) study showed that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination as discussed by the authors.

TL;DR: In this article, a planar epitaxial lateral overgrowth of GaN on oxidized AlAs (AlAs) formed on Si substrates is demonstrated, and the number of structural defects in GaN laterally grown over the AlAs is remarkably reduced compared to GaN grown on the stripe templates.

Abstract: InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001) substrates that were patterned with a SiNx mask. Scanning electron microscopy and cathodoluminescence (CL) imaging experiments were performed to examine lateral variations in structure and QW luminescence energy. CL wavelength imaging (CLWI) measurements show that the QW peaks on the top of the grooves are red-shifted in comparison with the QW emission from the side walls. The results show that In atoms have migrated to the top of the pyramids during the QW growth. The effects of V/III ratio, growth temperature as well as ELO GaN stripe orientation on the QW properties are also studied.

TL;DR: In this article, defect formation and In segregation in InGaN/GaN quantum wells were studied using cathodoluminescence, transmission electron microscopy (TEM), and high-resolution transmission electron microscope (HR-TEM).