J
J. von Borany
Researcher at Helmholtz-Zentrum Dresden-Rossendorf
Publications - 62
Citations - 1099
J. von Borany is an academic researcher from Helmholtz-Zentrum Dresden-Rossendorf. The author has contributed to research in topics: Ion implantation & Nanoclusters. The author has an hindex of 16, co-authored 59 publications receiving 1048 citations.
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Journal ArticleDOI
Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
Lars Rebohle,J. von Borany,Rossen Yankov,Wolfgang Skorupa,Ida E. Tyschenko,Hartmut Fröb,Karl Leo +6 more
TL;DR: In this paper, the photoluminescence (PL) and electroluminecence (EL) properties of Ge-implanted SiO2 layers thermally grown on a Si substrate were investigated and compared to those of Si-implants O2 films.
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Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
TL;DR: In this paper, the microstructural, optical and electrical properties of Si-, Ge- and Sn-implanted silicon dioxide layers were investigated, and it was found that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV(Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV.
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Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films
J. von Borany,R. Grötzschel,Karl-Heinz Heinig,Andreas Markwitz,W. Matz,Bernd Schmidt,Wolfgang Skorupa +6 more
TL;DR: In this article, the depth distribution of Ge implanted into thermally grown SiO2 films has been studied after annealing using transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction.
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Ga1−xMnxN epitaxial films with high magnetization
G. Kunert,Sylwia Dobkowska,Tian Li,Helfried Reuther,Carsten Kruse,S. Figge,Rafal Jakiela,Alberta Bonanni,Jörg Grenzer,W. Stefanowicz,J. von Borany,Maciej Sawicki,Tomasz Dietl,Detlef Hommel +13 more
TL;DR: In this article, the fabrication of pseudomorphic wurtzite Ga1−xMnxN grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy was reported.
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Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry
Nico Klingner,Nico Klingner,René Heller,Gregor Hlawacek,J. von Borany,John A. Notte,Jason Huang,Stefan Facsko +7 more
TL;DR: Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM) and its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale.