L
Lars Rebohle
Researcher at Helmholtz-Zentrum Dresden-Rossendorf
Publications - 207
Citations - 2756
Lars Rebohle is an academic researcher from Helmholtz-Zentrum Dresden-Rossendorf. The author has contributed to research in topics: Electroluminescence & Silicon. The author has an hindex of 26, co-authored 194 publications receiving 2396 citations. Previous affiliations of Lars Rebohle include Kansas State University & Dresden University of Technology.
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Journal ArticleDOI
Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
Lars Rebohle,J. von Borany,Rossen Yankov,Wolfgang Skorupa,Ida E. Tyschenko,Hartmut Fröb,Karl Leo +6 more
TL;DR: In this paper, the photoluminescence (PL) and electroluminecence (EL) properties of Ge-implanted SiO2 layers thermally grown on a Si substrate were investigated and compared to those of Si-implants O2 films.
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Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
TL;DR: In this paper, the microstructural, optical and electrical properties of Si-, Ge- and Sn-implanted silicon dioxide layers were investigated, and it was found that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV(Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV.
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Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices
TL;DR: In this article, a green electroluminescence with luminance up to 2800cd∕m2 is reported from indium-tin-oxide ∕SiO2:Tb∕Si metal-oxide-semiconductor devices.
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Room-temperature short-wavelength infrared Si photodetector
Yonder Berencén,Slawomir Prucnal,Fang Liu,Ilona Skorupa,René Hübner,Lars Rebohle,Shengqiang Zhou,Harald Schneider,Manfred Helm,Manfred Helm,Wolfgang Skorupa +10 more
TL;DR: St steady-state room-temperature short-wavelength infrared p-n photodiodes from single-crystalline Si hyperdoped with Se concentrations as high as 9 × 1020 cm−3 are presented by a robust and reliable non-equilibrium processing consisting of ion implantation followed by millisecond-range flash lamp annealing.