Jaechul Ryu

TL;DR: In this article, mass-produced graphene films synthesized by hydrogen-free rapid thermal chemical vapor deposition (RT-CVD), roll-to-roll etching, and transfer methods were reported.

TL;DR: This work enhances the transfer efficiency of the large-area graphene films on a substrate with arbitrary thickness and rigidity and performs a theoretical multiscale simulation from continuum to atomic level to compare the mechanical stresses caused by the R2R and the hot-pressing methods.

TL;DR: The PSAF-transferred graphene is found to be free from residues and shows excellent charge carrier mobility as high as ∼17,700 cm(2)/V·s with less doping compared to the graphene transferred by thermal release tape (TRT) or poly(methyl methacrylate) (PMMA) as well as good uniformity over large areas.

TL;DR: A simple method to tune the electrical properties of CVD graphene through n-doping by vaporized molecules at 70 °C, where the dopants in vapor phase are mildly adsorbed on graphene surface without direct contact with solution, confirmed that the vapor-phase doping provides not only very high carrier concentration but also good long-term stability in air, which is particularly important for practical applications.

TL;DR: In this article, the prepreg layer has a thickness of at most about 1.5 mm and contains a fiber material and a resin material in an embodiment, and the content of the resin material is about 70% or less by volume.